PDF《深圳市奥伦德科技股份有限公司》

深圳市奥伦德科技股份有限公司 Shenzhen Orient Tech Ltd .

Co ., Ltd Add:Block A 3rd Floor No.4 Building Tian An Cyber Park Huang Ge Rd, Long Gang Dist, Shenzhen, Guangdong,

518172 Web: www.orient-opto.com Copyright?

2018 Orient .All rights Reserved A0

1 1. Scope: ? This specification applies to high brightness LED chip of InGaN/Sapphire. 2. Features: ? Low Voltage, High Brightness and High Luminous Efficiency . ? High Reliability and Long Lifetime. ? Excellent Uniformity on Wavelength and Luminous Intensity. ? ESD2000V 100% Probing Test and Sorting. 3. Structure: ? Mesa Type:smooth surface. ? Electrodes P(Anode)Side: gold alloy. N(Cathode)Side:gold alloy. 4. Size: ? Chip Size:185μm±10μm*275μm±10μm. ? Chip Height:100μm±10μm. ? P Pad Size:80μm±5μm,N Pad Size:85μm±5μm. ? Pattern Drawing:fig.1. fig.1 深圳市奥伦德科技股份有限公司 Shenzhen Orient Tech Ltd . Co ., Ltd Add:Block A 3rd Floor No.4 Building Tian An Cyber Park Huang Ge Rd, Long Gang Dist, Shenzhen, Guangdong,

518172 Web: www.orient-opto.com Copyright?

2018 Orient .All rights Reserved A0

2 5. Electro-Optical Characteristics: (Ta=+25℃) 6. Application Notes: ? All data are measured by Orient's tester on bare chips within 98% of the nominal value. ? Measurement error for dominant wavelength is ±1nm ? GaN LEDs are class

1 ESD sensitivity. ESD protection during chip using and handling is recommended. Parameter Symbol Unit Min Max Test Condition Forward voltage VF V 3.0 3.3 IF=20mA Reverse current IR μA

0 0.2 VR=10V Dominant wavelength Wd nm 457.5

460 IF=20mA

460 461.5 461.5

463 463 464.5 464.5

466 466 467.5 467.5

469 469 470.5 Luminous Intensity IV mw

24 26 IF=20mA

26 28

28 31