PDF《国产中高压抗辐照功率 MOSFET 单粒子效应》

200 V,在UGS=-10 V 时器件安全工作的漏压不到额定电压的 10%.从图中看到,未优化器件的抗 SEB 能力和抗 SEGR 的能力较差,不能满足模块使用要求.

4 结论 从实验结果中可以看到, 对于

500 V 抗辐照功率 MOSFET 器件 KW5, 在最恶劣的栅偏置条件下(UGS=-15 V), KW5 型功率 MOSFET 仍可以在

400 V 下工作,表明此款功率 MOSFET 具有较好的抗单粒子性能.随着负栅压的 增大, 器件的单粒子安全工作区并未缩小, 说明 KW5 抗SEGR 加固得到有效提高. 对于

250 V 抗辐照功率 MOSFET 器件 KW2,在UGS=0 V, UDS=250 V 偏置条件下器件仍可安全工作.实验结果不仅为 KW5,KW2 的航天应用提供 了技术参考,也为抗辐射加固功率 MOSFET 系列产品的研制提供了可行的方案. 参考文献: [

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HOMME F,et al. Characterization of single event burnout in power MOSFET using backside laser testing[J]. IEEE Trans. Nucl. Sci., 2006,53(6):3145-3152. [

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100 0 U DS /V Fig.5 Single event effect safe operating area of samples KW5 before optimization 图5优化前,KW5 抗辐照功率 MOSFET 单粒子 辐照时安全工作区 第1期高博等: 国产中高压抗辐照功率 MOSFET 单粒子效应

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