PDF《深圳市奥伦德科技股份有限公司》

深圳市奥伦德科技股份有限公司 Shenzhen Orient Tech Ltd .

Co ., Ltd Add:Block A 3rd Floor No.4 Building Tian An Cyber Park Huang Ge Rd, Long Gang Dist, Shenzhen, Guangdong,

518172 Web: www.orient-opto.com Copyright?

2018 Orient .All rights Reserved A0

1 1. Scope: ? The specification applies to NIP silicon photo-diode chips. ? Type:ORT2160PD 2. Structure: ? NIP planar type. ? Top(Cathode)Side:aluminum(Al) alloy. ? Back(Anode)Side:silver(Ag) alloy. 3. Size:(60mil*60mil) ? Chip size :1520μm * 1520μm ± 30μm ? Chip thickness :300μm ± 25μm ? Active area :1350μm * 1350μm ± 15μm ? Pad size :250μm * 250μm ± 10μm ? Pattern drawing:per fig.

1 4. Electro-Optical Characteristics: (Ta=+25℃) Parameter Symbol Test Condition Min Typ Max Unit Forward voltage VF IF=10mA, H=0 0.5 1.3 V Reverse Breakdown voltage VBR IR=100μA, H=0

35 V Reverse Dark Current ID VR=10V, H=0

10 nA Light Current IL VR=5V,Has 1mw/cm2 ,@ 940nm

55 μA Peak Sensing wavelength λP

940 nm Junction Capacitance CJ VR=3V, F=1MHz

12 pF 深圳市奥伦德科技股份有限公司 Shenzhen Orient Tech Ltd . Co ., Ltd Add:Block A 3rd Floor No.4 Building Tian An Cyber Park Huang Ge Rd, Long Gang Dist, Shenzhen, Guangdong,

518172 Web: www.orient-opto.com Copyright?

2018 Orient .All rights Reserved A0

2 fig.1 5. Spectral Response