PDF《韦文生教授简介》

435 (2018): 265-270. [2] Wensheng Wei, Lulu Liu, Chunxi Zhang, Jianzhu Ye, (p+ )Nanocrystalline/(n- ) Crystalline/(n+ )Nanocrystalline Si Fast Recovery Diode with (p+ )Nanocrystalline SiC Inserted in Cathode Junction, Surface and Coatings Technology,

320 (2017): 178-182. [3] Wensheng Wei, Fei Luo, Chunxi Zhang, Qi Shen, Detection of Reverse Recovery Characteristics of Power Diodes, IET Power Electronics,

9 (2016): 476-481. [4] Wensheng Wei, Chunxi Zhang, p+ -n- -n+ type Power Diode with Crystalline/ Nanocrystalline Si Mosaic Electrodes, Journal of Semiconductors,

37 (2016): 064007-1-6. [5] Wensheng Wei, Jing Li, Shaoyun Zhao, Numerical analysis on reverse recovery characteristics of 4H-SiC p+ -n- -n+ power diode with injection conditions, Applied Physics A,

118 (2015): 1387-1398. [6] Wensheng Wei, Qiubo Zhang, Shaoyun Zhao, Yaoju Zhang, Two intermediate- bands solar cells of InGaN/InN quantum dot supracrystals, Applied Physics A,

116 (2014): 1009-1016. [7] Wensheng Wei, Feng Shan, Shaoyun Zhao, Qiubo Zhang, Performance Comparison for Different Material Quantum Dot Single Intermediate Band Solar Cells, Applied Mechanics and Materials, 477-478 (2014): 404-411. [8] Qiubo Zhang, Wensheng Wei, Single intermediate band solar cells of InGaN/InN quantum dot supracrystals, Applied Physics A,

113 (2013): 75-82. [9] Qiubo Zhang, Wensheng Wei, Feng Shan. Analysis on micro-/poly-crystalline SiGe alloy solar cell. Advanced Materials Research,

690 (2013): 2872-2880. [10] Feng Shan, Wensheng Wei (corresponding author), Design and simulation of a-Si:H/nc-Si:H tandem solar cells, Advanced Materials Research,

382 (2012): 100-105. ?

5 [11] Wensheng Wei, Jianling Su, Congliang Zhang, Liang Chu, Tianmin Wang, Structural effect on intrinsic stress in nanocrystalline Si:H films, VACUUM,

86 (2011): 151-155. [12] Wensheng Wei, Detection of carrier information in heterojunctions of nanocrystalline/crystalline Si, Solid State Sciences,

12 (2010): 789-794. [13] Wensheng Wei, Xunlei Yan, Dependence of solar cell performances on Si:H nanostructure, Applied Physics A,

97 (2009): 895-903. [14] Wensheng Wei, Xunlei Yan, Structural characterization of boron doped hydrogenated nanocrystalline silicon films, VACUUM,

83 (2009): 787-791. [15] Wensheng Wei, Xunlei Yan, Tianmin Wang, One-dimensional self-consistent solution of modulation doped nanocrystalline/crystalline Si heterojunctions, Superlattice &

microstructures,

45 (2009): 547-554. [16] Wensheng Wei, Mechanical stress sensor of (n+ )nanocrystalline/(p+ )crystalline Si heterojunction, Solid State Sciences,

10 (2008): 1222-1227. [17] Wensheng Wei, Ningning Zhao, Tianmin Wang, Conduction behavior of hydrogenated nanocrystalline silicon backward diode, Nanotechnology,

18 (2007): 025203-1-5. [18] Wensheng Wei, Tianmin Wang, Yuliang He, Investigation on high mobility nanocrystalline Si with crystalline Si heterostructure, Superlattices &

microstructures,

41 (2007): 216-226. [19] Wensheng Wei, One- and two-phonon Raman scattering from hydrogenated nanocrystalline silicon films, VACUUM,

81 (2007): 857-865. [20] Wensheng Wei, Gangyi Xu, Jinliang Wang, Tianmin Wang, Raman spectra of intrinsic and doped hydrogenated nanocrystalline silicon films, VACUUM,

81 (2007): 656-662. [21] Wensheng Wei, Tianmin Wang, W. Z. Shen, Tunneling in heterojunction of n-type hydrogenated nanocrystalline silicon film with p+ -type crystal silicon, Semiconductor Science and Technology,

21 (2006): 532-539. [22] H. Chen, W. Z. Shen, W. S. Wei, Structural order effect in visible photoluminescence properties of nanocrystalline Si:H thin films, Applied Physics Letters,