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MHVIC2114NR2

1 RF Device Data Freescale Semiconductor RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114NR2 wideband integrated circuit is designed for base station applications.

It uses Freescale'

s newest High Voltage (26 to

28 Volts) LDMOS IC technology and integrates a multi--stage structure. Its wideband On--Chip matching design makes it usable from

1600 to

2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W--CDMA. The device is in a PFP--16 flat pack package that provides excellent thermal performance through a solderable backside contact. Final Application ? Typical Two--Tone Performance: VDD =

27 Volts, IDQ1 =

95 mA, IDQ2 =

204 mA, IDQ3 =

111 mA, Pout =

15 Watts PEP, Full Frequency Band Power Gain ―

32 dB IMD ― --30 dBc Driver Application ? Typical Single--Channel W--CDMA Performance: VDD =

27 Volts, IDQ1 =

96 mA, IDQ2 =

204 mA, IDQ3 =

111 mA, Pout =

23 dBm, 2110--2170 MHz, 3GPP Test Model 1, Measured in 3.84 MHz BW @

5 MHz Offset,

64 DTCH, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain ―

32 dB ACPR ― --58 dBc ? P1dB =

14 Watts, Gain Flatness = 0.2 dB from

2110 to

2170 MHz ? Capable of Handling 3:1 VSWR, @

27 Vdc,

2140 MHz,

15 Watts CW Output Power Features ? Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters ? On--Chip Matching (50 Ohm Input, DC Blocked, >

5 Ohm Output) ? Integrated Temperature Compensation with Enable/Disable Function ? Integrated ESD Protection ? RoHS Compliant ? In Tape and Reel. R2 Suffix = 1,500 Units per

16 mm,

13 inch Reel.

16 15

14 13

12 11

10 1

2 3

4 5

6 7

8 (Top View)

9 N.C. VGS3 VGS2 VGS1 RFin VDS1 VDS2 N.C. VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout N.C. RFin Quiescent Current Temperature Compensation

3 Stages IC VDS1 RFin IC VGS3 VDS3/RFout VGS2 VGS1 VDS2 Note: Exposed backside flag is source terminal for transistors. Figure 1. Block Diagram Figure 2. Pin Connections LIFETIME BUY LAST ORDER

1 JUL

11 LAST SHIP

30 JUN

12 Document Number: MHVIC2114NR2 Rev. 5, 5/2006 Freescale Semiconductor Technical Data MHVIC2114NR2 CASE 978- -03 PFP- -16

2100 MHz,

27 V,

23 dBm SINGLE W- -CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER

16 1 ? Freescale Semiconductor, Inc., 2006. All rights reserved.

2 RF Device Data Freescale Semiconductor MHVIC2114NR2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Storage Temperature Range Tstg --

65 to +150 °C Operating Junction Temperature TJ

150 °C Input Power Pin

5 dBm Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case Driver Application Stage 1,

27 Vdc, IDQ1 =

96 mA (Pout = +0.2 W CW) Stage 2,

27 Vdc, IDQ2 =

204 mA Stage 3,

27 Vdc, IDQ3 =

111 mA RθJC 11.5 7.52 5.52 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114)

0 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22--A113, IPC/JEDEC J--STD--020

3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit W- -CDMA Characteristics (In Freescale Test Fixture,

50 ohm system) VDD =