PDF《LIFETIME BUY》

23 dBm CW IDQ1 =

96 mA, IDQ2 =

204 mA, IDQ3 =

111 mA TC = 85_C

20 40

15 Pout, OUTPUT POWER (dBm) Figure 9. Power Gain versus Output Power G ps , POWER GAIN (dB) 25_C 85_C TC = --30_C

20 25

30 35

40 38

36 34

32 30

28 26

24 22 --60 --10

15 25_C 85_C TC = --30_C

25 30

35 40

45 --20 --30

40 --50 Pout, OUTPUT POWER (dBm) Figure 10. S21 Phase versus Output Power S21 PHASE( _ ) VDD =

27 Vdc, f =

2140 MHz IDQ1 =

96 mA, IDQ2 =

204 mA, IDQ3 =

111 mA VDD =

27 Vdc, f =

2140 MHz IDQ1 =

96 mA, IDQ2 =

204 mA, IDQ3 =

111 mA 1.3 TC = --30_C --17 --15 --11 --13 17.5 22.5 27.5 32.5 37.5

20 LIFETIME BUY LAST ORDER

1 JUL

11 LAST SHIP

30 JUN

12 6 RF Device Data Freescale Semiconductor MHVIC2114NR2 TYPICAL CHARACTERISTICS 3rd Order 5th Order

34 --65 --30

17 2170 MHz Pout, OUTPUT POWER (dBm) Figure 11. W- -CDMA ACPR versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) VDD =

27 Vdc 3GPP Test Model

1 64 DPCH

2110 MHz

2140 MHz

18 20

22 23

25 27

29 31

32 --35 --40 --45 --55 --50 --60

2300 --90 --20

2000 IDQ3 =

100 mA

122 mA f, FREQUENCY (MHz) Figure 12. Two- -Tone Intermodulation Distortion Products versus Frequency IMD, INTERMODULATION DISTORTION (dBc) VDD =

27 Vdc Pout =

23 dBm Two--Tone Avg. Tone Spacing =

100 kHz

2250 2200

2150 2100

2050 --30 --50 --40 --60 --80

100 mA

111 mA

110 --80 --10

0 3rd Order TONE SPACING (MHz) Figure 13. Two- -Tone Intermodulation Distortion Products versus Tone Spacing INTERMODULATION DISTORTION (dBc) IMD, VDD =

27 Vdc, f =

2140 MHz Pout = 7.5 W, Two--Tone Avg. 7th Order --20 --30 --40 --50 --60 --70

30 10

60 80

100 3.25

7 --40 VBIAS1 T, TEMPERATURE (C) Figure 14. Fixture Bias versus Temperature VDD =

27 Vdc, f =

2140 MHz R1 = R2 = R3 =

1000 Ohms --20

0 20

40 60

80 6.75 6.5

6 5.75 5.5

5 4.75 4.25

4 3.75 3.5 V BIAS , FIXTURE BIAS VOLTAGE (V) VBIAS3 T, TEMPERATURE (C) Figure 15. Gate Bias versus Temperature

100 3.5 4.5 --40 VGS1 &

VGS2 VDD =

27 Vdc, f =

2140 MHz R1 = R2 = R3 =

1000 Ohms --30 --20 --10

0 10

20 30

40 50

60 70

80 90 4.4 4.3 4.2 4.1

4 3.9 3.8 3.7 3.6 V GS , IC GATE BIAS VOLTAGE (V) VGS3

0 2 1.8 1.6 1.4 1.2

1 0.8 0.6 0.4 0.2 I GS , GATE BIAS CURRENT (A) IGS1 &

IGS2 IGS3

33 30

28 26

24 21

19 122 mA

111 mA --70 5th Order IDQ1 =

96 mA, IDQ2 =

204 mA, IDQ3 =

111 mA

20 50

40 70

90 100 6.25 5.25 4.5

3 VBIAS2 LIFETIME BUY LAST ORDER

1 JUL

11 LAST SHIP

30 JUN

12 MHVIC2114NR2

7 RF Device Data Freescale Semiconductor Figure 16. Series Equivalent Input and Load Impedance f MHz Zin ? Zload ?

2110 2140

2170 1.1 + j2.7 1.2 + j3.7 1.1 + j3.4 57.9 -- j12.1 50.6 -- j18.9 42.3 -- j21.1 VDD =

27 Vdc, IDQ1 =

96 mA, IDQ2 =

204 mA, IDQ3 =

111 mA, Pout =

23 dBm Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Z in Z load Device Under Test Output Matching Network Zo =

50 ? f =

2110 MHz f =

2170 MHz f =

2110 MHz f =

2170 MHz Zload Zin LIFETIME BUY LAST ORDER

1 JUL

11 LAST SHIP

30 JUN

12 8 RF Device Data Freescale Semiconductor MHVIC2114NR2 NOTES MHVIC2114NR2

9 RF Device Data Freescale Semiconductor NOTES

10 RF Device Data Freescale Semiconductor MHVIC2114NR2 NOTES MHVIC2114NR2

11 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS CASE 978- -03 ISSUE C PFP- -16 DIM MIN MAX MILLIMETERS A 2.000 2.300 A1 0.025 0.100 A2 1.950 2.100 D 6.950 7.100 D1 4.372 5.180 E 8.850 9.150 E1 6.950 7.100 E2 4.372 5.180 L 0.466 0.720 L1 0.250 BSC b 0.300 0.432 b1 0.300 0.375 c 0.180 0.279 c1 0.180 0.230 e 0.800 BSC h ------ 0.600 θ