PDF《BLF861A》

BLF861A UHF power LDMOS transistor t e e h s a t a d t c u d o r P

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0 2 r e b m e t p e S

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v e R IMPORTANT NOTICE Dear customer, As of December 7th,

2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) [email protected] use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - ? Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - ? Ampleon B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon

2001 Feb

09 2 Philips Semiconductors Product speci?cation UHF power LDMOS transistor BLF861A FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Designed to withstand abrupt load mismatch errors ? Source on underside eliminates DC isolators;

reducing common mode inductance ? Designed for broadband operation (UHF band) ? Internal input and output matching for high gain and optimum broadband operation. APPLICATIONS ? Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. PINNING - SOT540A PIN DESCRIPTION

1 drain

1 2 drain

2 3 gate

1 4 gate

2 5 source connected to ?ange

5 1

2 4

3 Top view MBK777 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th =

25 °C in a common source

860 MHz test circuit. Note 1. Sync compression: input sync ≥ 33%;

output sync 27%. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). MODE OF OPERATION f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) ?Gp (dB) CW, class-AB

860 32

150 >

13.5 typ. 14.5 >

50 ≤1 PAL BG (TV);

class-AB

860 (ch 69)

32 >

150 typ.

170 (peak sync) >

14 >

40 note

1 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage ?

65 V VGS gate-source voltage ? ±15 V ID drain current (DC) ?

18 A Ptot total power dissipation Tmb ≤

25 °C ?

318 W Tstg storage temperature ?65 +150 °C Tj junction temperature ?

200 °C

2001 Feb

09 3 Philips Semiconductors Product speci?cation UHF power LDMOS transistor BLF861A THERMAL CHARACTERISTICS CHARACTERISTICS Tj =

25 °C;

per section;

unless otherwise speci?ed. Note 1. Capacitance values without internal matching. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base Tmb =

25 °C;

Ptot =

318 W 0.55 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0;

ID = 1.5 mA

65 ? ? V VGSth gate-source threshold voltage VDS =

10 V;

ID =

150 mA

4 ? 5.5 V IDSS drain-source leakage current VGS = 0;

VDS =

32 V ? ? 2.2 ?A IDSX drain cut-off current VGS = VGSth +

9 V;

VDS =

10 V

18 ? ? A IGSS gate leakage current VGS = ±15 V;