PDF《BLF861A》

VDS =

0 ? ?

25 nA gfs forward transconductance VDS =

10 V;

ID =

4 A ?

4 ? S RDSon drain-source on-state resistance VGS = VGSth +

9 V;

ID =

4 A ?

160 ? m? Ciss input capacitance VGS = 0;

VDS =

32 V;

f =

1 MHz (1) ?

82 ? pF Coss output capacitance VGS = 0;

VDS =

32 V;

f =

1 MHz (1) ?

40 ? pF Crss feedback capacitance VGS = 0;

VDS =

32 V;

f =

1 MHz (1) ?

6 ? pF handbook, halfpage

0 50

100 0

20 40

60 80

10 20

30 40 VDS (V) Coss (pF) MLD510 Fig.2 Output capacitance as a function of drain-source voltage;

typical values per section. VGS = 0;

f =

1 MHz;

Tj =

25 °C.

2001 Feb

09 4 Philips Semiconductors Product speci?cation UHF power LDMOS transistor BLF861A APPLICATION INFORMATION RF performance in a common source

860 MHz test circuit. Th =

25 °C;

Rth mb-h = 0.15 K/W;

unless otherwise speci?ed. Note 1. Sync compression: input sync ≥ 33%;

output sync 27% measured in an

860 MHz test circuit. Ruggedness in class-AB operation The BLF861A is capable of withstanding a load mismatch corresponding to VSWR =

10 :

1 through all phases under the following conditions: VDS =

32 V;

f =

860 MHz at rated load power. The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load mismatch errors under the nominal power condition. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) ηD (%) dIm (dBc) ?Gp (dB) CW;

class-AB

860 32

1 150 >

13.5 typ. 14.5 >

50 ? ≤1 2-tone;

class-AB f1 =

860 f1 = 860.1

32 1

150 (PEP) >

14 >

40 ≤?25 ? PAL BG (TV);

class-AB

860 (ch 69)

32 1 >

150 typ.

170 (peak sync) >

14 >

40 ? note

1 handbook, halfpage

400 900

12 0

4 8

500 xi ri zi (?) f (MHz)

600 700

800 MCD871 Fig.3 Input impedance as a function of frequency (series components);

typical push-pull values. CW, class-AB operation;

VDS =

32 V;

IDQ =

1 A;

PL =

170 W (total device);

Th =

25 °C. handbook, halfpage

400 900

10 0 ?5

5 500

600 700

800 f (MHz) ZL (?) MCD872 XL RL Fig.4 Load impedance as a function of frequency (series components);

typical push-pull values. CW, class-AB operation;

VDS =

32 V;

IDQ =

1 A;

PL =

170 W (total device);

Th =

25 °C.

2001 Feb

09 5 Philips Semiconductors Product speci?cation UHF power LDMOS transistor BLF861A handbook, halfpage

0 100 PL (PEP) (W) Gp (dB)

300 20

15 5

0 10 ηD (%)

80 60

20 0

40 200 MLD514 ηD Gp Fig.5 Power gain and drain efficiency as functions of peak envelope load power;

typical values. Th =

25 °C;

VDS =

32 V;

IDQ =

1 A. 2-tone: f1 =

860 MHz (?6 dB);

f2 = 860.1 MHz (?6 dB) measured in an

860 MHz test circuit. handbook, halfpage

0 100 PL (PEP) (W) dim (dBc)

300 0 ?20 ?60 ?80 ?40

200 MLD515 d5 d3 Fig.6 Intermodulation distortion as a function of peak envelope output power;

typical values. Th =

25 °C;

VDS =

32 V;

IDQ =

1 A. 2-tone: f1 =

860 MHz (?6 dB);

f2 = 860.1 MHz (?6 dB) measured in an

860 MHz test circuit. handbook, halfpage

0 50 PL (W) Gp (dB)

250 20

15 5

0 10

100 150

200 MLD516 ηD (%) ηD Gp

80 60

20 0

40 Fig.7 Power gain and drain efficiency as functions of load power;

typical values. Th =

25 °C;

VDS =

32 V;

IDQ =

1 A;

CW, class-AB;

f =

860 MHz;

measured in an

860 MHz test circuit.

2001 Feb

09 6 Philips Semiconductors Product speci?cation UHF power LDMOS transistor BLF861A This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... handbook, full pagewidth R1 C5 L7 L10 L9 L11 L12 L