PDF《AO4912》

Symbol Max Q2 Units VDS V VGS V IDM IAR A EAR mJ TJ, TSTG °C Symbol VDS IFM TJ, TSTG Junction and Storage Temperature Range Power Dissipation A W 1.

28 -55 to

150 °C

2 Pulsed Diode Forward Current B Continuous Forward Current AF PD IF TA=25°C TA=70°C

30 V TA=25°C Parameter Reverse Voltage A 2.2

20 3 TA=70°C Maximum Schottky Max Q1

30 ±20 8.5

17 43

15 34 Units TA=25°C TA=70°C Power Dissipation PD Pulsed Drain Current B Continuous Drain Current AF ID -55 to

150 -55 to

150 Junction and Storage Temperature Range

2 1.28 1.28 TA=25°C TA=70°C

2 Avalanche Current B ±12

30 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Repetitive avalanche energy 0.3mH B Gate-Source Voltage W A 6.4

40 30

7 6.8 AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor Features Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 8.5A ID=7A (VGS = 10V) RDS(ON) < 17m?