PDF《OptiMOS™-5 Power-Transistor》

IAUT300N08S5N012 OptiMOS?-5 Power-Transistor Features ? N-channel - Enhancement mode ? AEC qualified ? MSL1 up to 260°C peak reflow ? 175°C operating temperature ? Green product (RoHS compliant) ? Ultra low Rds(on) ? 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25°C, V GS=10V1)

300 A T C=100 °C, V GS=10 V2)

300 Pulsed drain current2) I D,pulse T C=25 °C

1200 Avalanche energy, single pulse2) E AS I D=150 A

817 mJ Avalanche current, single pulse I AS -

300 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C

375 W Operating and storage temperature T j, T stg - -55 .

.. +175 °C IEC climatic category;

DIN IEC 68-1 - - 55/175/56 Value VDS

80 V RDS(on) 1.2 m? ID

300 A Product Summary Type Package Marking IAUT300N08S5N012 P/G-HSOF-8-1 5N08012 H-PSOF-8-1

8 1

1 8 Tab Tab Rev. 1.0 page

1 2016-11-29 IAUT300N08S5N012 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.4 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage2) V (BR)DSS V GS=0 V, I D=1 mA

80 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=275 ?A 2.2

3 3.8 Zero gate voltage drain current2) I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1

1 ?A V DS=50 V, V GS=0 V, T j=85 °C2) -

1 20 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - -

100 nA Drain-source on-state resistance RDS(on) V GS=6 V, I D=75 A - 1.3 1.7 m? V GS=10 V, I D=100 A - 1.0 1.2 Values IAUT300N08S5N012 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss -

12500 16250 pF Output capacitance C oss -

2000 2600 Reverse transfer capacitance Crss -

86 130 Turn-on delay time t d(on) -

31 - ns Rise time t r -

19 - Turn-off delay time t d(off) -

69 - Fall time t f -

55 - Gate Charge Characteristics2) Gate to source charge Q gs -

56 73 nC Gate to drain charge Q gd -

37 56 Gate charge total Q g -

178 231 Gate plateau voltage V plateau - 4.5 - V Reverse Diode Diode continous forward current2) I S - -

300 A Diode pulse current2) I S,pulse - -

1200 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 0.9 1.2 V Reverse recovery time2) t rr -

86 - ns Reverse recovery charge2) Q rr -

177 - nC Values V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=100 A, R G=3.5 ? V DD=40 V, I D=100 A, V GS=0 to

10 V 2) Defined by design. Not subject to production test. 1) Current is limited by bondwire;

with an R thJC = 0.4 K/W the chip is able to carry 400A at 25°C. V R=40 V, I F=50A, di F/dt =100 A/?s T C=25 °C Rev. 1.0 page

3 2016-11-29 IAUT300N08S5N012

1 Power dissipation

2 Drain current P tot = f(T C);

V GS ≥

6 V I D = f(T C);

V GS ≥

6 V

3 Safe operating area

4 Max. transient thermal impedance I D = f(V DS);

T C =

25 °C;

D =

0 Z thJC = f(t p) parameter: t p parameter: D =t p/T

1 ?s

10 ?s

100 ?s

1 ms

1 10

100 1000

10000 0.1

1 10

100 I D [A] VDS [V] single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1

100 10-3 10-2 10-1

100 Z thJC [K/W] tp [s]

0 100

200 300

400 0

50 100

150 200 P tot [W] TC [°C]

0 50

100 150

200 250

300 350

0 50

100 150

200 I D [A] TC [°C] Rev. 1.0 page

4 2016-11-29 IAUT300N08S5N012

5 Typ. output characteristics

6 Typ. drain-source on-state resistance I D = f(V DS);