PDF《OptiMOS™-5 Power-Transistor》

T j =

25 °C R DS(on) = (I D);

T j =

25 °C parameter: V GS parameter: V GS

7 Typ. transfer characteristics

8 Typ. drain-source on-state resistance I D = f(V GS);

V DS = 6V R DS(on) = f(T j);

I D =

100 A;

V GS =

10 V parameter: T j 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 -60 -20

20 60

100 140

180 R DS(on) [m ? ] Tj [°C] -55 °C

25 °C

175 °C

0 200

400 600

800 1000

1200 2

4 6

8 I D [A] VGS [V] 4.5 V 5.5 V

6 V 6.5 V

5 V

10 V

0 200

400 600

800 1000

1200 0

1 2

3 4

5 6

7 I D [A] VDS [V]

6 V

10 V 4.5 V

5 V 5.5 V 6.5 V 0.5

1 1.5

2 2.5

3 3.5

4 0

100 200

300 R DS(on) [m ? ] ID [A] Rev. 1.0 page

5 2016-11-29 IAUT300N08S5N012

9 Typ. gate threshold voltage

10 Typ. capacitances V GS(th) = f(T j);

V GS = V DS C = f(V DS);

V GS =

0 V;

f =

1 MHz parameter: I D

11 Typical forward diode characteristicis

12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start)

25 °C

100 °C

150 °C

10 100

1000 1

10 100

1000 I AV [A] tAV [?s]

25 °C

175 °C

100 101

102 103

104 0 0.2 0.4 0.6 0.8

1 1.2 1.4 I F [A] VSD [V] Ciss Coss Crss

101 102

103 104

105 0

20 40

60 80 C [pF] VDS [V]

275 ?A

2750 ?A

1 1.5

2 2.5

3 3.5

4 -60 -20

20 60

100 140

180 V GS(th) [V] Tj [°C] Rev. 1.0 page

6 2016-11-29 IAUT300N08S5N012

13 Typical avalanche energy

14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j);

I D_typ =

1 mA parameter: I D

15 Typ. gate charge

16 Gate charge waveforms V GS = f(Q gate);

I D =

300 A pulsed parameter: V DD

76 77

78 79

80 81

82 83

84 85

86 87 -60 -20

20 60

100 140

180 V BR(DSS) [V] Tj [°C]

16 V

40 V

64 V

0 1

2 3

4 5

6 7

8 9

10 0

40 80

120 160 V GS [V] Qgate [nC]

300 A

150 A

75 A

0 400

800 1200

1600 2000

25 75

125 175 E AS [mJ] Tj [°C] V GS Qgate Q gs Qgd Q g V GS Qgate Q gs Qgd Q g Rev. 1.0 page

7 2016-11-29 IAUT300N08S5N012 Published by Infineon Technologies AG

81726 Munich, Germany ? Infineon Technologies AG

2016 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IAUT300N08S5N012 Revision History Version Version 1.0 Date 29.12.2016 Changes Final Data Sheet Rev. 1.0 page