PDF《AO4576》

AO4576 30V N-Channel AlphaMOS General Description Product Summary VDS ID (at VGS=10V) 20A RDS(ON) (at VGS=10V) < 5.

8m? RDS(ON) (at VGS = 4.5V) < 9.8m? Application 100% UIS Tested 100% Rg Tested 30V ? Latest Trench Power AlphaMOS (αMOS LV) technology ? Very Low RDS(on) at 4.5VGS ? Low Gate Charge ? High Current Capability ? RoHS and Halogen-Free Compliant ? DC/DC Converters in Computing, Servers, and POL ? Isolated DC/DC Converters in Telecom and Industrial G D S AO4576 Symbol Min Typ Max Units BVDSS

30 V VDS=30V, VGS=0V

1 TJ=55°C

5 IGSS

100 nA VGS(th) Gate Threshold Voltage 1.4 1.8 2.2 V 4.7 5.8 TJ=125°C 6.2 7.6 7.7 9.8 m? gFS

91 S VSD 0.7

1 V IS

4 A Ciss

1037 pF Coss

441 pF Crss

61 pF Rg 0.7 1.5 2.3 ? Qg(10V) 15.5 22.5 nC Qg(4.5V) 6.8 10.5 nC Qgs 3.0 nC Qgd 3.6 nC tD(on) 5.5 ns tr 3.3 ns t

18 ns IS=1A,VGS=0V Maximum Body-Diode Continuous Current Diode Forward Voltage VGS=4.5V, ID=20A VGS=10V, ID=20A DYNAMIC PARAMETERS VDS=5V, ID=20A VDS=VGS, ID=250?A Drain-Source Breakdown Voltage Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions ID=250?A, VGS=0V IDSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS=10V, VDS=15V, RL=0.75?, R =3? ?A Zero Gate Voltage Drain Current m? Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz Turn-On DelayTime Input Capacitance Total Gate Charge VGS=10V, VDS=15V, ID=20A Turn-On Rise Time Gate Drain Charge Total Gate Charge VGS=0V, VDS=0V, f=1MHz Gate Source Charge Output Capacitance Turn-Off DelayTime RDS(ON) Static Drain-Source On-Resistance Gate resistance Forward Transconductance SWITCHING PARAMETERS tD(off)

18 ns tf 4.3 ns trr 12.7 ns Qrr 17.2 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Turn-Off Fall Time RGEN=3? Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/?s IF=20A, dI/dt=500A/?s Turn-Off DelayTime A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures

1 to

6 are obtained using