PDF《TEST REPORT》

2018 HS-26C32EH Total Dose Test 2. Results 2.1 Attributes Data Testing of the HS-26C32EH at LDR showed no rejected devices after irradiation, screening to the SMD limits. The SMD specifies that the part will meet all pre-irradiation limits post-irradiation because the pre-irradiation limits and post-irradiation limits are the same. No bias sensitivity was noted. Table 1. HS-26C32EH Total Dose Test Attributes Data 2.2 Variables Data The plots in Figures

3 through

21 show data at all downpoints. Most of the plots show the individual total dose response of each of the four channels. Note that error bars are not supplied for this data because the distributions were tight enough to render this unnecessary. Dose Rate Bias Sample Size Downpoint Bin

1 (Note 6) Rejects 0.01rad(Si)/s Figure

2 16 Pre-irradiation

16 50krad(Si)

16 0 100krad(Si)

16 0 0.01rad(Si)/s Grounded

16 Pre-irradiation

16 50krad(Si)

16 0 100krad(Si)

16 0 Note: 6. Bin

1 indicates a device that passes all pre-irradiation specification limits. Figure 3. HS-26C32EH enable input clamp voltage as a function of biased (Figure 2) and unbiased (grounded) LDR irradiation to 100krad(Si). The sample size for each of the LDR cells was 16. The SMD limits are -1.5V to 1.5V. -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0

0 50

100 VICN_NEN Biased VICN_NEN Grounded VICN_EN Biased VICN_EN Grounded VICP_NEN Biased VICP_NEN Grounded VICP_EN Biased VICP_EN Grounded Spec Limit Spec Limit Total Dose (krad(Si)) Enable Clamp Voltage (V) TR058 Rev.0.00 Page

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2018 HS-26C32EH Total Dose Test Figure 4. HS-26C32EH enable HIGH and LOW input voltage as a function of biased (Figure 2) and unbiased (grounded) LDR irradiation to 100krad(Si). The sample size for each of the LDR cells was 16. The SMD limit is 3.85V maximum (enable HIGH voltage) and 1.65V minimum (enable LOW input voltage). Figure 5. HS-26C32EH tristate output leakage, output at VDD, each channel, as a function of biased (Figure 2) and unbiased (grounded) LDR irradiation to 100krad(Si). The sample size for each of the LDR cells was 16. The SMD limits are -5000nA (-5?A) to +5000nA (+5?A). 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0 50

100 VIH_NEN Biased VIH_NEN Grounded VIH_EN Biased VIH_EN Grounded VIL_NEN Biased VIL_NEN Grounded VIL_EN Biased VIL_EN Grounded Spec Limit Spec Limit Total Dose (krad(Si)) Enable HIGH and LOW Voltage (V) -6000 -4000 -2000

0 2000

4000 6000

0 50

100 IOZH_A Biased IOZH_A Grounded IOZH_B Biased IOZH_B Grounded IOZH_C Biased IOZH_C Grounded IOZH_D Biased IOZH_D Grounded Spec limit Spec limit Total Dose (krad(Si)) Tri-State Output Leakage (nA) TR058 Rev.0.00 Page

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2018 HS-26C32EH Total Dose Test Figure 6. HS-26C32EH tristate output leakage, output at ground, each channel, as a function of biased (Figure 2) and unbiased (grounded) LDR irradiation to 100krad(Si). The sample size for each of the LDR cells was 16. The SMD limits are -5000nA (-5?A) to +5000nA (+5?A). Figure 7. HS-26C32EH output HIGH voltage, each channel, as a function of biased (Figure 2) and unbiased (grounded) LDR irradiation to 100krad(Si). The sample size for each of the LDR cells was 16. The SMD limit is 4.1V minimum. -6000 -4000 -2000

0 2000

4000 6000

0 50

100 IOZL_A Biased IOZL_A Grounded IOZL_B Biased IOZL_B Grounded IOZL_C Biased IOZL_C Grounded IOZL_D Biased IOZL_D Grounded Spec Limit Spec Limit Total Dose (krad(Si)) Tri-State Output Leakage (nA) 4.0 4.5 5.0

0 50

100 VOH_A Biased VOH_A Grounded VOH_B Biased VOH_B Grounded VOH_C Biased VOH_C Grounded VOH_D Biased VOH_D Grounded Spec Limit Total Dose (krad(Si)) Output HIGH Voltage (V) TR058 Rev.0.00 Page