PDF《IRF9Z30, SiHF9Z30》

50 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -

250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ±

20 V - - ±

500 nA Zero Gate Voltage Drain Current IDSS VDS = max. rating, VGS =

0 V - - -

250 μA VDS = max. rating x 0.8, VGS =

0 V, TJ =125 °C - - -

1000 Drain-Source On-State Resistance RDS(on) VGS = -

10 V ID = - 9.3 Ab - 0.093 0.14 ? Forward Transconductance gfs VDS =

2 x VGS, IDS = -

9 Ab 3.1 4.7 - S Dynamic Input Capacitance Ciss VGS =

0 V, VDS = -

25 V, f = 1.0 MHz, see fig.

9 -

900 - pF Output Capacitance Coss -

570 - Reverse Transfer Capacitance Crss -

140 - Total Gate Charge Qg VGS = -

10 V ID = -

18 A, VDS = - 0.8 max. rating. see fig.

17 -

26 39 nC Gate-Source Charge Qgs - 6.9

10 Gate-Drain Charge Qgd - 9.7

15 Turn-On Delay Time td(on) VDD = -

25 V, ID = -

18 A, Rg =

13 ?, RD = 1.3??, see fig.

16 (MOSFET switching times are essentially independent of operating temperature) -

12 18 ns Rise Time tr -

110 170 Turn-Off Delay Time td(off) -

21 32 Fall Time tf -

64 96 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol? showing the ? integral reverse? p - n junction diode - - -

18 A Pulsed Diode Forward Currenta ISM - - -

60 Body Diode Voltage VSD TJ =

25 °C, IS = -

18 A, VGS =

0 Vb - - - 6.3 V Body Diode Reverse Recovery Time trr TJ =

25 °C, IF = -

18 A, dI/dt =

100 A/μsb

54 120

250 ns Body Diode Reverse Recovery Charge Qrr 0.20 0.47 1.1 μC S D G IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix S12-3048-Rev. A, 24-Dec-12

3 Document Number:

91459 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig.

1 - Typical Output Characteristics Fig.

2 - Typical Transfer Characteristics Fig.

3 - Typical Saturation Characteristics Fig.

4 - Maximum Safe Operating Area

0 5

10 15

20 25 -

8 V

80 μs Pulse Test -

7 V VGS = -

5 V

25 20

15 10

5 0 -

4 V -

5 V -

10 V - VDS, Drain-to-Source Voltage (V) - I D , Drain Current (A)

102 10

1 0 - VGS, Gate-to-Source Voltage (V) - I D , Drain Current (A) 0.1

5 2

5 2

5 2

2 4

6 8

10 80 ?s Pulse Test VDS =

2 x VGS TJ =

25 °C TJ =

150 °C - VDS, Drain-to-Source Voltage (V) - I D , Drain Current (A) -

10 V -

8 V -

7 V VGS = -

5 V -

5 V -

4 V

80 μs Pulse Test

0 1

2 3

4 5

25 20

15 10

5 0 - VDS, Drain-to-Source Voltage (V) - I D , Drain Current (A) Operation in this Area Limited by RDS(on) SiHF9Z30 SiHF9Z32 SiHF9Z30 SiHF9Z32 TC =

25 °C TJ =

150 °C Single Pulse

10 μs

100 μs

1 μs

10 μs DC

1 2

5 10

2 5

102 1

5 2

10 2

5 102

2 5

103 IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix S12-3048-Rev. A, 24-Dec-12

4 Document Number:

91459 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig.

5 - Typical Transconductance vs. Drain Current Fig.

6 - Typical Source-Drain Diode Forward Voltage Fig.

7 - Breakdown Voltage vs. Temperature Fig.

8 - Normalized On-Resistance vs. Temperature

80 μs Pulse Test VDS =

2 x VGS TJ =

25 ° C TJ =

150 °C