PDF《IXGH30N120B3D1》

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2008 IXYS CORPORATION, All rights reserved Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.

Typ. Max. VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V ICES VCE = VCES

300 μA VGE = 0V TJ = 125°C 1.5 mA IGES VCE = 0V, VGE = ±20V ±100 nA VCE(sat) IC = 30A, VGE = 15V, Note

1 2.96 3.5 V TJ = 125°C 2.95 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC110 TC = 110°C

30 A IF110 TC = 110°C

28 A ICM TC = 25°C, 1ms

150 A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM =

60 A (RBSOA) Clamped inductive load @ 0.8 ? VCE PC TC = 25°C

300 W TJ -55 ... +150 °C TJM

150 °C Tstg -55 ... +150 °C Md Mounting torque (TO-247) 1.13 /

10 Nm/lb.in. TL Maximum lead temperature for soldering

300 °C TSOLD 1.6mm (0.062 in.) from case for 10s

260 °C Weight TO-247

6 g TO-268

4 g DS99566A(05/08) VCES = 1200V IC110 = 30A VCE(sat) ≤ ≤ ≤ ≤ ≤? 3.5V tfi(typ) = 204ns GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 TO-247 AD (IXGH) G C E G = Gate C = Collector E = Emitter TAB = Collector C (TAB) TO-268 (IXGT) G E C (TAB) Features z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard packages Advantages z High power density z Low gate drive requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines IXYS reserves the right to change limits, test conditions, and dimensions. IXGH30N120B3D1 IXGT30N120B3D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs IC = 30A, VCE = 10V, Note

1 11

19 S Cies

1750 pF Coes VCE = 25V, VGE = 0V, f = 1MHz

120 pF Cres

46 pF Qg

87 nC Qge IC = 30A, VGE = 15V, VCE = 0.5 ? VCES

15 nC Qgc

39 nC td(on)

16 ns tri

37 ns Eon 3.47 mJ td(off)

127 200 ns tfi

204 380 ns Eoff 2.16 4.0 mJ td(on)

18 ns tri

38 ns Eon 6.70 mJ td(off)

216 ns tfi

255 ns Eoff 5.10 mJ RthJC 0.42 °C/W RthCS 0.21 °C/W Inductive load, TJ = 25° ° ° ° °C IC = 30A, VGE = 15V, Notes

2 VCE = 0.8 ? VCES , RG = 5Ω Inductive load, TJ = 125° ° ° ° °C IC = 30A,VGE = 15V, Notes

2 VCE = 0.8 ? VCES ,RG = 5Ω Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times may increase for VCE (Clamp) >

0.8 VCES , higher TJ or increased RG . IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 TO-268 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ?P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 e ? P TO-247 AD Outline Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Test Conditions Min. Typ. Max. VF 2.8 V TJ = 150°C 1.6 V IRM

4 A trr

100 ns RthJC 0.9 °C/W IF = 30A,VGE = 0V, Note

1 IF = 30A,VGE = 0V, -diF /dt = 100A/μs, TJ = 100°C VR = 300V TJ = 100°C ?