PDF《IXGH30N120B3D1》

2008 IXYS CORPORATION, All rights reserved IXGH30N120B3D1 IXGT30N120B3D1 Fig. 1. Output Characteristics @ 25?C

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60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE - Volts I C - Amperes 9V 7V VGE = 15V 13V 11V Fig. 2. Extended Output Characteristics @ 25?C

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27 30 VCE - Volts I C - Amperes VGE = 15V 7V 11V 9V 13V Fig. 3. Output Characteristics @ 125?C

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60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE - Volts I C - Amperes 7V 9V VGE = 15V 13V 11V 5V Fig. 4. Dependence of VCE(sat) on Junction Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25

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150 TJ - Degrees Centigrade V CE(sat) - Normalized VGE = 15V I C = 60A I C = 30A I C = 15A Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

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14 15 VGE - Volts V CE - Volts I C = 60A TJ = 25?C 30A 15A Fig. 6. Input Admittance

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60 65 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VGE - Volts I C - Amperes TJ = 125?C 25?C - 40?C IXYS reserves the right to change limits, test conditions, and dimensions. IXGH30N120B3D1 IXGT30N120B3D1 Fig. 11. Maximum Transient Thermal Impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1

1 10 Pulse Width - Seconds Z (th)JC - ?C / W Fig. 7. Transconductance

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60 70 IC - Amperes g f s - Siemens TJ = - 40?C 25?C 125?C Fig. 10. Reverse-Bias Safe Operating Area

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1000 1200 VCE - Volts I C - Amperes TJ = 125?C RG = 5? dV / dt <

10V / ns Fig. 8. Gate Charge

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90 QG - NanoCoulombs V GE - Volts VCE = 6........