PDF《MDI5N40/MDD5N40》

Dec.

2011. Version 1.5 MagnaChip Semiconductor Ltd.

1 MDI5N40 N-channel MOSFET 400V I-PAK (TO-251) G D S Absolute Maximum Ratings (Ta = 25o C) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS

400 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current TC=25 o C ID 3.4 A TC=100 o C 2.15 A Pulsed Drain Current (1) IDM 13.6 A Power Dissipation TC=25 o C PD

45 W W/ o C Derate above

25 o C 0.36 Peak Diode Recovery dv/dt (3) Dv/dt 4.5 V/ns Repetitive Pulse Avalanche Energy (4) EAR 4.5 mJ Single Pulse Avalanche Energy (4) EAS

170 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) RθJA

110 o C/W Thermal Resistance, Junction-to-Case (1) RθJC 2.75 MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6? ? ? ? D G S General Description The MDI5N40 / MDD5N40 use advanced Magnachip's MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N40 is suitable device for SMPS, HID and general purpose applications. Features VDS = 400V ID = 3.4A @VGS = 10V RDS(ON) ≤ 1.6? @VGS = 10V Applications Power Supply PFC Ballast Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.

2 MDI5N40 N-channel MOSFET 400V Ordering Information Part Number Temp. Range Package Packing RoHS Status MDI5N40TH -55~150 o C I-Pak Tube Halogen Free MDD5N40RH -55~150 o C D-Pak Reel Halogen Free Electrical Characteristics (Ta =25o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250?A, VGS = 0V

400 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250?A 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 400V, VGS = 0V - -

1 ?A Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - -

100 nA Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 1.7A 1.2 1.6 ? Forward Transconductance gfs VDS = 30V, ID = 1.7A - 2.0 - S Dynamic Characteristics Total Gate Charge Qg VDS = 320V, ID = 3.4A, VGS = 10V (3) -

9 nC Gate-Source Charge Qgs - 2.5 Gate-Drain Charge Qgd -

4 Input Capacitance Ciss VDS = 25V, VGS = 0V, f = 1.0MHz -

290 pF Reverse Transfer Capacitance Crss -

3 Output Capacitance Coss -

46 Turn-On Delay Time td(on) VGS = 10V, VDS = 200V, ID = 3.4A, RG = 25? (3) -

12 ns Rise Time tr -

25 Turn-Off Delay Time td(off) -

20 Fall Time tf -

30 Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS - 3.4 - A Source-Drain Diode Forward Voltage VSD IS = 3.4A, VGS = 0V - 1.4 V Body Diode Reverse Recovery Time trr IF = 3.4A, dl/dt = 100A/?s (3) -

200 ns Body Diode Reverse Recovery Charge Qrr - 1.0 ?C Note : 1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤3.4A, di/dt≤200A/us, VDD=50V, Rg =25?, Starting TJ=25°C 4. L=26.0mH, IAS=3.4A, VDD=50V, Rg =25?, Starting TJ=25°C Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.

3 MDI5N40 N-channel MOSFET 400V Fig.5 Transfer Characteristics Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature

5 10

15 20

1 2

3 4

5 6

7 8

9 10 Notes 1.250? ? ? ? PulseTest 2.TC =25℃ ℃ ℃ ℃ Vgs =5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V I D ,Drain Current [A] VDS ,Drain-SourceVoltage[V] -50