PDF《MDI5N40/MDD5N40》

0 50

100 150

200 0.8 0.9 1.0 1.1 1.2 Notes : 1. VGS =

0 V 2. ID = 250? BV DSS , (Normalized) Drain-Source Breakdown Voltage TJ , Junction Temperature [ o C]

0 5

10 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 VGS =10.0V VGS =20V R DS(ON) [? ] ID ,DrainCurrent[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1

1 10 25℃ 150℃ Notes : 1. VGS =

0 V 2. 250us pulse I DR Reverse Drain Current [A] VSD , Source-Drain Voltage [V]

4 6

8 1

10 * Notes;

1. VDS =30V 150℃ ℃ ℃ ℃ 25℃ ℃ ℃ ℃ I D [A] VGS [V] -50

0 50

100 150

200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : 1. VGS =

10 V 2. ID = 1.7 A R DS(ON) , (Normalized) Drain-Source On-Resistance TJ , Junction Temperature [ o C] Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.

4 MDI5N40 N-channel MOSFET 400V Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power Dissipation

10 -1

10 0

10 1

10 2

10 -2

10 -1

10 0

10 1

10 2

10 ?s

100 ?s

100 ms DC

10 ms

1 ms Operation in This Area is Limited by R DS(on) Single Pulse TJ =Max rated TC =25℃ ℃ ℃ ℃ I D , Drain Current [A] VDS , Drain-Source Voltage [V] 1E-5 1E-4 1E-3 0.01 0.1

1 10

0 1000

2000 3000

4000 5000 single Pulse RthJC =2.75 /W ℃ ℃ ℃ ℃ TC = 25℃ ℃ ℃ ℃ Power (W) Pulse Width (s)

25 50

75 100

125 150

0 1

2 3

4 5 I D , Drain Current [A] TC , Case Temperature [ ] ℃

10 -5

10 -4

10 -3

10 -2

10 -1

10 0

10 1

10 -2

10 -1

10 0 Notes : Duty Factor, D=t1 /t2 PEAK TJ = PDM * Zθ JC * Rθ JC (t) + TC RΘ JC =2.75 /W ℃ single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 Z θ JC (t), Thermal Response t1 , Rectangular Pulse Duration [sec]

0 2

4 6

8 0

2 4

6 8

10 80V 200V 320V Note : I D = 5A V GS , Gate-Source Voltage [V] QG , Total Gate Charge [nC]

1 10

0 100

200 300

400 500

600 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Notes ;

1. VGS =

0 V 2. f =

1 MHz Crss Coss Ciss Capacitance [pF] VDS , Drain-Source Voltage [V] Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.

5 MDI5N40 N-channel MOSFET 400V Physical Dimension TO-251 (IPAK) Dimensions are in millimeters, unless otherwise specified Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.

6 MDI5N40 N-channel MOSFET 400V Physical Dimension D-PAK, 3L Dimensions are in millimeters, unless otherwise specified Dec. 2011. Version 1.5 MagnaChip Semiconductor Ltd.

7 MDI5N40 N-channel MOSFET 400V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.