PDF《HFS3N80》

??????????????????ΖΔ?????? HFS3N80

2 1

3 BVDSS =

800 V RDS(on) typ ? ID = 3.

0 A ? Originative New Design ? Superior Avalanche Rugged Technology ? Robust Gate Oxide Technology ? Very Low Intrinsic Capacitances ? Excellent Switching Characteristics ? Unrivalled Gate Charge :

17 nC (Typ.) ? Extended Safe Operating Area ? Lower RDS(ON) ?7\S#9GS=10V ? 100% Avalanche Tested Thermal Resistance Characteristics FEATURES Absolute Maximum Ratings TC=25? unless otherwise specified HFS3N80 800V N-Channel MOSFET Symbol Parameter Value Units VDSS Drain-Source Voltage

800 V ID Drain Current C Continuous (TC = 25??? 3.0* A Drain Current C Continuous (TC = 100??? 1.9* A IDM Drain Current C Pulsed (Note 1) 12* A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2)

320 mJ IAR Avalanche Current (Note 1) 3.0 A EAR Repetitive Avalanche Energy (Note 1) 10.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25??? ?ΖΣΒΥΖ?ΒΓΠΧΖ?????

39 W 0.31 W/?? TJ, TSTG Operating and Storage Temperature Range -55 to +150 ?? TL Maximum lead temperature for soldering purposes, 1/8" from case for

5 seconds

300 ?? Symbol Parameter Typ. Max. Units R?JC Junction-to-Case -- 3.2 ???? R?JA Junction-to-Ambient -- 62.5 Dec

2005 TO-220F 1.Gate 2. Drain 3. Source

1 * Drain current limited by maximum junction temperature ??????????????????ΖΔ?????? HFS3N80 Notes ;

1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=67mH, IAS=3.0A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD?$GLGW?$?V9DD?%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ??V'XW\&\FOH? 5. Essentially Independent of Operating Temperature Electrical Characteristics TC=25 qC unless otherwise specified IS Continuous Source-Drain Diode Forward Current -- -- 3.0 A ISM Pulsed Source-Drain Diode Forward Current -- --

12 VSD Source-Drain Diode Forward Voltage IS = 3.0 A, VGS =

0 V -- -- 1.4 V trr Reverse Recovery Time IS = 3.0 A, VGS =

0 V diFGW $?V(Note 4) --

650 -- ?? Qrr Reverse Recovery Charge -- 5.2 -- ?& Symbol Parameter Test Conditions Min Typ Max Units VGS Gate Threshold Voltage VDS = VGS, ID =

250 ?? 2.5 -- 4.5 V RDS(ON) Static Drain-Source On-Resistance VGS =

10 V, ID = 1.5 A? -- 4.0 4.8 ???? On Characteristics BVDSS Drain-Source Breakdown Voltage VGS =

0 V, ID =

250 ??

800 -- -- V ?BVDSS /?TJ Breakdown Voltage Temperature Coefficient ID =

250 ????ΖΗΖΣΖΟΔΖΕ?ΥΠ???? -- 0.99 -- ???? IDSS Zero Gate Voltage Drain Current VDS =

800 V, VGS =

0 V? -- --

1 ?? VDS =

640 V, TC = 125?? -- --

10 ?? IGSSF Gate-Body Leakage Current, Forward VGS =

30 V, VDS =

0 V -- --

100 ?? IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS =

0 V -- -- -100 ?? Off Characteristics Ciss Input Capacitance VDS =

25 V, VGS =

0 V, f = 1.0 MHz? --

700 910 ?? Coss Output Capacitance --

70 90 ?? Crss Reverse Transfer Capacitance --

7 9 ?? Dynamic Characteristics td(on) Turn-On Time VDS =

400 V, ID = 3.0 A, RG =

25 ???? ? ?ΠΥΖ?????? --

20 40 ?? tr Turn-On Rise Time --

55 110 ?? td(off) Turn-Off Delay Time --

30 60 ?? tf Turn-Off Fall Time --

40 80 ?? Qg Total Gate Charge VDS = 640V, ID = 3.0 A, VGS =

10 V ??ΠΥΖ?????? --

17 22 Ο?? Qgs Gate-Source Charge -- 4.5 -- Ο?? Qgd Gate-Drain Charge -- 7.5 -- Ο?? Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics ??????????????????ΖΔ?????? HFS3N80

10 -1

10 0

10 1

0 300

600 900

1200 1500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ????????? 1. VGS =