PDF《HFS3N80》

0 V 2. f =

1 MHz Crss Coss Ciss Capacitance [pF] VDS , Drain-Source Voltage [V] Typical Characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1.4

10 -1

10 0

10 1 150? ????????? 1. VGS = 0V ?V3XOVH7HVW 25?IDR , Reverse Drain Current [A] VSD , Source-Drain voltage [V]

0 4

8 12

16 20

0 2

4 6

8 10

12 VDS = 400V VDS = 160V VDS = 640V ??????????D = 3.0A V GS , Gate-Source Voltage [V] QG , Total Gate Charge [nC] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics I D , Drain Current [A] VDS, Drain-Source Voltage [V] I D , Drain Current [A] VGS, Gate-Source Voltage [V] R DS(on) , [ ?@ Drain-Source On-Resistance ID, Drain Current [A] ??????????????????ΖΔ?????? HFS3N80 Typical Characteristics (continued) t2 t1 PDM -100 -50

0 50

100 150

200 0.8 0.9 1.0 1.1 1.2 ????????? 1. VGS =

0 V 2. ID ?$ BV DSS , (Normalized) Drain-Source Breakdown Voltage TJ , Junction Temperature [ o C] -100 -50

0 50

100 150

200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ????????? 1. VGS =

10 V 2. ID = 1.5 A R DS(ON) , (Normalized) Drain-Source On-Resistance TJ , Junction Temperature [ o C]

25 50

75 100

125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 I D , Drain Current [A] TC , Case Temperature [ ?? Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Figure 11. Transient Thermal Response Curve

10 -5

10 -4

10 -3

10 -2

10 -1

10 0

10 1

10 -2

10 -1

10 0 ????????? 1. Z? -& (t) = 3.2 ?? ? ????? 2. Duty Factor, D=t1 /t2 3. TJM - TC = PDM * Z? -& (t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 Z ? -& (t), Thermal Response t1 , Square Wave Pulse Duration [sec]

100 101

102 103 10-2 10-1

100 101

100 ms DC

10 ms

1 ms

100 Ps Operation in This Area is Limited byR DS(on) * Notes : 1. TC =

25 o C 2. TJ =

150 o C 3. Single Pulse I D , Drain Current [A] VDS , Drain-Source Voltage [V] ??????????????????ΖΔ?????? HFS3N80 Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS

2 ----

2 1 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF .? 200nF 12V Same Type as DUT 10V DUT RG L I D ??????????????????ΖΔ?????? HFS3N80 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS + _ Driver RG Same Type as DUT VGS ? dv/dt controlled by RG ? IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period SEMIHOW REV.A0,May

2017 HFS3N80 Package Dimension 10.16±0.20 3.30 ±0.20 15.87 ±0.20 12.42 ±0.20 2.54typ 6.68 ±0.20 0.80±0.20 1.47max 2.54±0.20 4.70±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75 ±0.20 φ3.18±0.20 0.70±0.20 2.54±0.20 4.70±0.20 0.50±0.20 2.76±0.20 0.70±0.20 10.16±0.20 3.30 ±0.20 15.87 ±0.20 12.42 ±0.20 2.54typ 6.68 ±0.20 0.80±0.20 1.47max 2.54typ 9.75 ±0.20 φ3.18±0.20 TO-220F TO-220F-FM(Full Mold) Pin hole