PDF《Field-Proven GaN》

Field-Proven GaN Solutions from Qorvo? Qorvo? continues to bring the highest performance and reliability in support of our customers'

requirements.

With high-performance GaN technology supporting products from DC through Ka-band, Qorvo continues to build on a strong GaAs legacy by offering new products and strategic foundry services that strive to meet our partner'

s demanding system requirements. With Qorvo, not only are you getting world-class electrical performance, our partners also benefit from a '

trusted'

supplier with industry-leading GaN reliability. Qorvo is also the only GaN supplier to reach manufacturing readiness level (MRL) 9. Looking for a supplier who can take your ideas from concept to production? Qorvo is expanding the possibilities. The GaN Advantage Qorvo GaN powers improvements in SWaP-C analyses. With superior power, efficiency and gain, system designers now have the flexibility to make design trades that were previously not possible. Higher power densities lead to higher power capability in a smaller area. Reduced combining leads to improved efficiencies. Higher voltage operation results in lower system losses. Improved power handling supports high power switches and highly robust LNAs. Qorvo'

s leading GaN reliability at higher junction temperatures gives the user the confidence in long-term operation. Whether the motivation is to increase power, reduce board area or improve efficiency, Qorvo GaN makes this possible while reducing overall system costs. Key Qorvo GaN attributes: ? >

65 million device hours on 16,900 devices in the field, with less than 0.013% failures per million hours ? Proven reliability at high junction temperatures, mean time to failure (MTTF) of greater than

107 (10 million) to

109 (1 billion) hours at

200 degrees (C) and greater than

106 (1 million) to

108 (100 million) hours at

225 degrees (C) ? Production technologies supporting DC through Ka-band Gallium Nitride Innovation GaN Packaging Solutions Qorvo packaging solutions focus on maximizing performance while managing thermal behavior and cost. Our high performance GaN products can be found in a variety of Cu- based packages for superior heat transfer. Depending on the functionality and operating conditions, Qorvo offers bolt down packages down to small surface mount packages in either air cavity or overmold formats. QGaN25HV: ? Technology: 0.25μm GaN on SiC ? Drain bias (Vd): up to 48V ? Operating frequencies: DC-12 GHz ? PAE: >

78% at 3.5 GHz ? Power density: 6.5W/mm at 3.5 GHz ? Reliability: >

10M hours at 200C and 48V (3-temp DC MTTF w/failure defined as 10% degradation in Idmax) QGaN15: ? Technology: 0.15μm GaN on SiC ? Drain bias (Vd): up to 28V ? Operating frequencies: DC-40 GHz ? PAE: >

50% at

30 GHz ? Power density: 4.2W/mm at

30 GHz ? Reliability: >

10M hours at 200C and 28V (DC MTTF w/failure defined as 10% degradation in Idmax) QGaN50: ? Technology: 0.50μm GaN on SiC ? Drain bias (Vd): up to 65V ? Operating frequencies: DC-8 GHz ? PAE: >

78% at 3.5 GHz ? Power density: 9W/mm at 3.5 GHz ? Reliability: >

10M hours at 200C and 65V (DC MTTF w/failure defined as 10% degradation in Idmax) QGaN25: ? Technology: 0.25μm GaN on SiC ? Drain bias (Vd): up to 40V ? Operating frequencies: DC-18 GHz ? PAE: >

60% at

10 GHz ? Power density: 6W/mm at

10 GHz ? Reliability: >

10M hours at 200C and 40V (3-temp DC MTTF w/failure defined as 10% degradation in Idmax) GaN Foundry Processes As a DoD-accredited '