PDF《Field-Proven GaN》

50 65 NI-360 EAR99 QPD1015/L 100W, 28V, DC-3.5 GHz DC-3.5

15 50

55 28

260 NI-360 HM EAR99 TGF2929-HM 100W, 28V, DC-3.5 GHz DC-3.5

15 50

55 28

260 NI-360 EAR99 TGF2929-FL/-FS 90W Discrete Power DC-18 19.2 50.5 70.5

28 400-2,000 Die 3A001b.3.b TGF2023-2-20 120W, 36V, DC-3.5 GHz DC-3.5

16 50.8

52 36

360 NI-360 3A001b.3.b T1G4012036-FL/-FS 100W, 32V, DC-3.5 GHz DC-3.5

15 51

50 32

250 NI-360 3A001b.3.b TGF2819-FL/-FS 120W, 50V, DC-3.2 GHz DC-3.2 18.6 52.1 72.6

50 260 NI-360 EAR99 QPD1008/L 150W, 65V, DC-2.7 GHz DC-2,700 21.8 52.5 64.8

65 240 7.2x6.6 DFN EAR99 QPD1013 2x120W, 36V, DC-3.5 GHz DC-3.5

16 54

52 36

520 NI-650 3A001b.3.b T1G4020036-FL/-FS 285W, 36V, DC-2 GHz DC-2

19 54.2

54 36

576 NI-780 EAR99 T1G2028536-FL/-FS 500W, 50V 3.1-3.5 GHz 3.1-3.5 16.5 56.6

60 50

750 17.4x24 Cu Bolt Down 3A001b.3.a QPD1017 500W, 50V,1.2-1.4 GHz 1.2-1.4 19.9 57.3 66.7

50 750 17.4x24 Cu Bolt Down EAR99 QPD1003 500W, 50V, 2.9-3.3 GHz 2,900-3,300 15.5 57.7

67 50

750 RF-565 3A001b.3a QPD1019 500W, 50V, 1.2-1.4 GHz DC-1 23.9 58.3 77.4

50 1000 NI-780 EAR99 QPD1016 Products sorted by Psat. Samples/evaluation fixtures are available;

call for details. GaN Standard Product Portfolio Qorvo'

s proven technology leadership in high-performance Gallium Arsenide (GaAs) has been extended to Gallium Nitride (GaN). With GaN proving to be an evolutionary technology in support of next generation military and commercial applications, Qorvo is leading the way with an assortment of world class products across frequency and functionality. With a growing portfolio of GaN-based amplifiers and switches along with our expanding line of high-performance transistors, Qorvo is the premiere solution provider for your GaN needs. Qorvo conducts extensive testing and analysis of both processes and products in order to provide the highest performance and reliability while delivering exceptional high volume manufacturing capability. Equally important is measuring and predicting thermal behaviors. Qorvo simulates FET channel temperature using finite element analysis then verifies those models against micro-Raman measurements of the FET in order to provide accurate long term lifetime reliability data. qorvo.com

3 www.qorvo.com/gan [email protected] GaN Low Noise Amplifiers Description Frequency (GHz) Max Pin (dBm) P1dB/IIP3 (dBm) Gain (dB) NF (dB) Voltage / Current (V / mA) Package (mm) ECCN Part Number S/C-Band LNA 2-6

30 18/30

22 1 10/100 4x4 PQFN EAR99 TGA2611-SM Wideband LNA 2........