PDF《深圳安尔芯科技有限公司》

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1 Rev.

1.04 MH253 Hall-effect sensor is a temperature stable, stress-resistant switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. MH253 includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. MH253 is rated for operation between the ambient temperatures C40℃ and +85℃ for the E temperature range. The four package styles available provide magnetically optimized solutions for most applications. Package types SO is an SOT-23(1.1 mm nominal height), SQ is an QFN2020-3(0.55 mm nominal height), a miniature low-profile surface-mount package, while package UA is a three-lead ultra mini SIP for through-hole mounting. The package type is in a Halogen Free version was verified by third party Lab. Features and Benefits ? CMOS Hall IC Technology ? Solid-State Reliability much better than reed switch ? Omni polar output switches with absolute value of North or South pole from magnet ? Low power consumption(2.6mA) ? High Sensitivity for reed switch replacement ? 100% tested at 125℃ for K. ? Small Size ? ESD HBM ±4KV Min ? COST competitive Applications ? Solid state switch ? Lid close sensor for power supply devices ? Magnet proximity sensor for reed switch replacement in high duty cycle applications. ? Safety Key on sporting equipment ? Revolution counter ? Speed sensor ? Position Sensor ? Rotation Sensor ? Safety Key DH253 DH H2 D 型号:DH253 型号:AR253 AR253 AR R2 A 深圳安尔芯科技有限公司 ShenZhen AnErXin Technology Co.LTD

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3 Rev. 1.04 C1:10nF C2:100pF R1:10KΩ Absolute Maximum Ratings At (Ta=25℃) Characteristics Values Unit Supply voltage,(VDD)

7 V Output Voltage,(Vout)

6 V Reverse voltage, (VDD) (VOUT) -0.3 V Magnetic flux density Unlimited Gauss Output current,(IOUT)

25 mA Operating Temperature Range, (Ta) "E" version -40 to +85 ℃ "K" version -40 to +125 ℃ Storage temperature range, (Ts) -55 to +150 ℃ Maximum Junction Temp,(Tj)

150 ℃ Thermal Resistance (θJA) UA / SO / SQ

206 /

543 /

543 ℃/W (θJC) UA / SO / SQ

148 /

410 /410 ℃/W Package Power Dissipation, (PD) UA / SO / SQ

606 /

230 /

230 mW Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum- rated conditions for extended periods may affect device reliability. Electrical Specifications DC Operating Parameters TA=+25℃, VDD=5.0V Parameters Test Conditions Min Typ Max Units Supply Voltage,(VDD) Operating 2.5

6 V Supply Current,(IDD) Average 2.6 6.0 mA Output Low Voltage,(VDSON) IOUT=10mA

400 mV Output Leakage Current,(Ioff) IOFF B BOP, Vout On

30 60 Gauss (BOPN) N pole to branded side, B > BOP, Vout On -60 -30 Release Point (BRPS) S pole to branded side, B < BRP, Vout Off

5 25 Gauss (BRPN) N pole to branded side, B < BRP, Vout Off -25 -5 Hysteresis,(BHYS) |BOPx - BRPx|

5 Gauss Typical Application circuit Out C1

253 Vcc R1 C2 VDD Out GND

2 型号:DH253 型号:AR253 深圳安尔芯科技有限公司 ShenZhen AnErXin Technology Co.LTD

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4 Rev. 1.04 Sensor Location, Package Dimension and Marking MH253 Package UA Package Hall Chip location

253 XXX SO Package Hall Plate Chip Location (Top View) (Bottom view) 253XX

1 2

3 NOTES: 1).Controlling dimension: mm 2).Leads must be free of flash and plating voids 3).Do not bend leads within

1 mm of lead to package interface. 4).PINOUT: Pin

1 VDD Pin

2 GND Pin

3 Output NOTES: 1. PINOUT (See Top View at left :) Pin

1 VDD Pin

2 Output Pin

3 GND 2. Controlling dimension: mm 3. Lead thickness after solder plating will be 0.254mm maximum Output Pin Assignment (Top view)

1 2

3 VDD GND Out

253 XXX 0.80 1.45 Hall Sensor Location

1 2

3 0.9 2.00 Hall Sensor Location Mark

3 型号:DH253 型号:AR253 R253 Package A 深圳安尔芯科技有限公司 ShenZhen AnErXin Technology Co.LTD

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5 Rev. 1.04 SQ Package

253 XX

1 2

3 1 Hall Sensor Location

1 2

1 3 Hall Plate Chip Location (Top view) NOTES: 1. PINOUT (See Top View at left) Pin

1 VDD Pin

2 Output Pin

3 GND 2. Controlling dimension: mm;

3. Chip rubbing will be 10mil maximum;

4. Chip must be in PKG. center.

4 型号:DH253 型号:AR253 深圳安尔芯科技有限公司 ShenZhen AnErXin Technology Co.LTD