PDF《CST2302X》

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ChipSourceTek.com E-mail: [email protected] [email protected] 20V* N-Channel Enhancement-Mode MOSFET General Description ID=3.2.A RDS(on)=48m?(Typ.)@VGS=4.5V RDS(on)=65m?(Typ.)@VGS=2.5V RDS(on)=90m?(Typ.)@VGS=1.8V Low Gate charge Fast switching speed High density cell design for ultra low On-Resistance Application: -Switching applications -Power management Lead free and green devices available Package: SOT23 Absolute Maximum Ratings (TA=25?C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20* V Gate-Source Voltage VGS ±12 V Drain Current a TC=25?C ID 3.2 A TC=70?C 1.5 Drain Current CPulsed a IDM 9.6 A Power Dissipation (TC=25?C) PD 0.90 W Power Dissipation (TC=75?C) 0.50 Storage Temperature Range TSTG -55 ~ +150 ?C Operating Junction Temperature Range TJ -55 ~ +150 ?C Thermal Resistance, Junction-to-Ambient1 RθJA

125 ?C/W Electrical Characteristics (TA=25?C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250?A

20 V Zero Gate Voltage Drain Current TJ=25°C IDSS VDS=16V, VGS=0V

1 ?A Gate-Body Leakage IGSS VGS=±12V, VDS=0V ±100 nA On Characteristics a Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 0.3 1.0 V Drain-Source On-State Resistance RDS(on) VGS=4.5V, ID=2.4A

48 60 mΩ VGS=2.5V, ID=2.0A

65 85 mΩ VGS=1.8V, ID=1.0A

90 125 mΩ Forward Transconductance gfs VDS=5V, ID=1A S G. Gate S. Source D. Drain CST2302X TEL: +86-0755-27595155

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29359586 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: [email protected] [email protected] Drain-Source Diode Characteristics a Continuous Source Current IS VG=VD=0V, Force Current --- --- 2.4 A Pulsed Source Current ISM --- --- 9.6 A Diode Forward Voltage VSD VGS=0V, IS=1A --- --- 1.3 V Dynamic Characteristics b Input Capacitance Ciss VDS=10V, VGS=0V, F=1.0MHz --- pF Output Capacitance Coss --- pF Reverse Transfer Capacitance Crss --- pF Switching Characteristics b Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=2.0A --- nC Gate-Source Charge Qgs --- nC Gate-Drain Charge Qgd --- nC Turn-On Delay Time Td(on) VDD=10V,ID=1.0A, VGEN=4.5V, RG=6Ω --- ns Rise Time Tr --- ns Turn-Off Delay Time Td(off) --- ns Fall Time Tf --- ns Notes: a. Repetitive Rating: Pulsed width limited by maximum junction temperature. b. Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%. Essential independent of operating temperature. c. Guaranteed by design, not subject to production testing. Switching Time Test Circuit and Waveforms TEL: +86-0755-27595155

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29359586 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: [email protected] [email protected] Soldering Methods For Products 1. Storage environment : Temperature=10?C ~ 35?C, Humidity=65% ± 15% 2. Reflow soldering of surface mount devices Figure : Temperature Profile Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (TL to TP) < 3?C/sec < 3?C/sec Preheat - Temperature Min (TSmin) 100?C 100?C - Temperature Max (TSmax) 150?C 200?C - Time (Min to Max) (ts)

60 ~

120 sec

60 ~

180 sec TSmax to TL - Ramp-up rate < 3?C/sec < 3?C/sec Time maintained above: - Temperature (TL) 183?C 217?C - Time (tL)

60 ~

150 sec

60 ~

150 sec Peak Temperature (TP) 240?C +0/-5?C 260?C +0/-5?C Time within 5?C of actual Peak Temperature (tP)

10 ~

30 sec

20 ~

40 sec Ramp-down rate < 6?C/sec