PDF《SUM47N10-24L》

Vishay Siliconix SUM47N10-24L Document Number:

72827 S-80272-Rev.

C, 11-Feb-08 www.vishay.com

1 N-Channel 100-V (D-S)

175 °C MOSFET FEATURES ? TrenchFET? Power MOSFET ?

175 °C Maximum Junction Temperature ?

100 % Rg Tested PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)

100 0.024 at VGS =

10 V

47 0.027 at VGS = 4.5 V

44 S D G Top View SUM47N10-24L-E3 (Lead (Pb)-free) TO-263 Ordering Information: D G S N-Channel MOSFET Notes: a. Surface Mounted on

1 x

1 FR4 Board. b. See SOA curve for voltage derating. ABSOLUTE MAXIMUM RATINGS TA =

25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS

100 V Gate-Source Voltage VGS ±

20 Continuous Drain Current (TJ =

175 °C)b TC =

25 °C ID

47 A TC =

125 °C

27 Pulsed Drain Current IDM

70 Continuous Source Current (Diode Conduction) IS

47 Single Pulse Avalanche Current IAS

40 Single Pulse Avalanche Energy (Duty Cycle ≤

1 %) L = 0.1 mH EAS

80 mJ Maximum Power Dissipation TC =

25 °C PD 136b W TA =

25 °C 3.75a Operating Junction and Storage Temperature Range TJ, Tstg -

55 to

175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Junction-to-Ambient PCB Mount RthJA

40 °C/W Free Air 62.5 Junction-to-Case RthJC 1.1 RoHS COMPLIANT www.vishay.com

2 Document Number:

72827 S-80272-Rev. C, 11-Feb-08 Vishay Siliconix SUM47N10-24L Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test;

pulse width ≤

300 ?s, duty cycle ≤

2 %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ =

25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS =

0 V, ID =

250 ?A

100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID =

250 ?A 1.0 3.0 Gate-Body Leakage IGSS VDS =

0 V, VGS = ±

20 V ±

100 nA Zero Gate Voltage Drain Current IDSS VDS =

100 V, VGS =

0 V

1 ?A VDS =

100 V, VGS =

0 V, TJ =

125 °C

50 VDS =

100 V, VGS =

0 V, TJ =

175 °C

250 On-State Drain Currentb ID(on) VDS =

5 V, VGS =

10 V

70 A Drain-Source On-State Resistanceb rDS(on) VGS =

10 V, ID =

40 A 0.019 0.024 Ω VGS =

10 V, ID =

40 A, TJ =

125 °C 0.048 VGS =

10 V, ID =

40 A, TJ =

175 °C 0.060 VGS = 4.5 V, ID =

20 A 0.021 0.027 Forward Transconductanceb gfs VDS =

15 V, ID =

40 A

70 S Dynamica Input Capacitance Ciss VGS =

0 V, VDS =

25 V, F =

1 MHz

2400 pF Output Capacitance Coss

290 Reverse Transfer Capacitance Crss

120 Total Gate Chargec Qg VDS =

50 V, VGS =

10 V, ID =

40 A

40 60 nC Gate-Source Chargec Qgs

11 Gate-Drain Chargec Qgd

9 Gate Resistance Rg f =

1 MHz

1 2.2 3.5 Ω Turn-On Delay Timec td(on) VDD =

50 V, RL = 1.25 Ω ID ?

47 A, VGEN =

10 V, Rg = 2.5 Ω

8 13 ns Rise Timec tr

40 60 Turn-Off Delay Timec td(off)

15 25 Fall Timec tf

80 120 Source-Drain Diode Ratings and Characteristics TC =

25 °C Pulsed Current ISM

70 A Diode Forward Voltageb VSD IF =

40 A, VGS =

0 V 1.0 1.5 V Source-Drain Reverse Recovery Time trr IF =

47 A, di/dt =