PDF《SUM47N10-24L》

100 A/?s

75 120 ns Document Number:

72827 S-80272-Rev. C, 11-Feb-08 www.vishay.com

3 Vishay Siliconix SUM47N10-24L TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted Output Characteristics Transconductance Capacitance VDS - Drain-to-Source Voltage (V) - Drain Current (A) I D

0 40

80 120

160 0

2 4

6 8

10 3 V VGS =

10 thru

6 V

4 V

5 V

0 20

40 60

80 100

0 10

20 30

40 50

60 - Transconductance (S) g fs TC = -

55 °C

25 °C

125 °C ID - Drain Current (A)

0 1000

2000 3000

4000 0

20 40

60 80

100 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss Ciss Crss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge VGS - Gate-to-Source Voltage (V) - Drain Current (A) I D

0 20

40 60

80 100

0 1

2 3

4 5 -

55 °C TC =

125 °C

25 °C - On-Resistance ( Ω ) ID - Drain Current (A) r DS(on) 0.00 0.01 0.02 0.03 0.04 0.05

0 20

40 60

80 100 VGS =

10 V VGS = 4.5 V - Gate-to-Source V oltage (V) Qg - Total Gate Charge (nC) V GS

0 4

8 12

16 20

0 20

40 60

80 VDS =

50 V ID =

40 A www.vishay.com

4 Document Number:

72827 S-80272-Rev. C, 11-Feb-08 Vishay Siliconix SUM47N10-24L TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted THERMAL RATINGS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72827. On-Resistance vs. Junction Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -

50 -

25 0

25 50

75 100

125 150

175 TJ - Junction Temperature (°C) VGS =

10 V ID =

40 A r DS(on) - On-Resistance (Normalized) Source-Drain Diode Forward Voltage VSD - Source-to-Drain Voltage (V) - Source Current (A) I S

100 10

1 0.3 0.6 0.9 1.2 TJ =

25 °C TJ =

175 °C

0 Maximum Avalanche Drain Current vs. Case Temperature TC - Case Temperature (°C) - Drain Current (A) I D

0 10

20 30

40 50

0 25

50 75

100 125

150 175 Safe Operating Area - Drain Current (A) I D

10 0.1 0.1

1 10

1000 Limited by rDS(on)*

1 100 TC =

25 °C Single Pulse

10 ms

100 ms, DC

100 ?s

10 ?s

100 1 ms VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (s)

2 1 0.1 0.01 10-4 10-3 10-2 10-1

1 10 Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5

30 0.05 0.02 Single Pulse Legal Disclaimer Notice www.vishay.com Vishay Revision: 08-Feb-17

1 Document Number:

91000 Disclaimer ? ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay'