编辑: 贾雷坪皮 | 2019-07-02 |
80 85
90 7 dBm
9 dBm CONVERSION GAIN (dB) RF FREQUENCY (GHz) MIXERS - SUB HARMONIC - CHIP
4 HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER,
71 -
86 GHz Conversion Gain, Upconverter, LO=9dBm, IF=
4 GHz, USB Input IP3, Upconverter, LO= 9dBm, IF=4 GHz, USB Conversion Gain IFBW vs. LO Power LO=31.25 GHz, USB Conversion Gain IFBW vs. LO Power Downconverter, LO=37.25 GHz, USB Input IP3, Upconverter, LO= 9dBm, IF=4 GHz, LSB Conversion Gain, Upconverter, LO=9dBm, IF=
4 GHz, LSB -30 -25 -20 -15 -10 -5
0 1.5
3 4.5
6 7.5
9 10.5
12 7 dBm
9 dBm CONVERSION GAIN (dB) IF FREQUENCY (GHz) -30 -25 -20 -15 -10 -5
0 1.5
3 4.5
6 7.5
9 10.5
12 7 dBm
9 dBm CONVERSION GAIN (dB) IF FREQUENCY (GHz) -30 -25 -20 -15 -10 -5
60 65
70 75
80 85
90 CG CONVERSION GAIN (dB) RF FREQUENCY (GHz) -30 -25 -20 -15 -10 -5
60 65
70 75
80 85
90 CG CONVERSION GAIN (dB) RF FREQUENCY (GHz)
0 2
4 6
8 10
60 65
70 75
80 85
90 IP3 IP3 (dBm) RF FREQUENCY (GHz)
0 2
4 6
8 60
65 70
75 80
85 90 IP3 IP3 (dBm) RF FREQUENCY (GHz) MIXERS - SUB HARMONIC - CHIP
5 HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER,
71 -
86 GHz RF Return Loss IF Return Loss LO Return Loss LO/IF Isolation vs. LO Drive RF/IF Isolation LO/RF isolation -20 -15 -10 -5
0 50
55 60
65 70
75 80
85 90
95 100 RF-RL RETURN LOSS (dB) RF FREQUENCY (GHz) -30 -25 -20 -15 -10 -5
0 5
2 6
10 14
18 22
26 30
34 38
42 46
50 LO-RL RETURN LOSS (dB) LO FREQUENCY (GHz) -40 -30 -20 -10
0 60
65 70
75 80
85 90 RF/IF Isolation ISOLATION (dB) RF FREQUENCY (GHz)
0 10
20 30
40 30
32 34
36 38
40 42
44 7 dBm
9 dBm ISOLATION (dB) LO FREQUENCY (GHz)
0 10
20 30
40 30
32 34
36 38
40 42
44 LO/RF ISOLATION (dB) LO FREQUENCY (GHz) -35 -30 -25 -20 -15 -10 -5
0 0
5 10
15 20
25 30 IF-RL RETURN LOSS (dB) IF FREQUENCY (GHz) MIXERS - SUB HARMONIC - CHIP
6 HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER,
71 -
86 GHz 2LO/RF Isolation
0 10
20 30
40 50
60 28
30 32
34 36
38 40
42 44 2XLO/RF ISOLATION (dB) LO FREQUENCY (GHz) MIXERS - SUB HARMONIC - CHIP
7 HMC1058 v01.0413 GaAs MMIC SUB HARMONIC MIXER,
71 -
86 GHz Outline Drawing Table 1. Absolute Maximum Ratings RF Input (LO = +9 dBm) +5 dBm LO Drive +20 dBm IF Input +3 dBm Maximum Junction Temperature
170 °C Thermal Resistance (RTH) (junction to die bottom)
555 °C/W Operating Temperature -55 to +85 °C Storage Temperature -65 to
150 °C Table 2. Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] For more information refer to the Packaging information Document in the Product Support Section of our website. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS 0.004 3. BOND PADS 1,
2 &
3 are 0.0059 [0.150] X 0.0039 [0.099]. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± 0.002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MIXE........