PDF《FDPF5N50UT》

November

2013 FDPF5N50UT ― N-Channel UniFET TM Ultra FRFET TM MOSFET ?2012 Fairchild Semiconductor Corporation FDPF5N50UT Rev.

C2 www.fairchildsemi.com

1 FDPF5N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET

500 V,

4 A,

2 Ω Features ? RDS(on) = 1.65 Ω (Typ.) @ VGS =

10 V, ID =

2 A ? Low Gate Charge (Typ.

11 nC) ? Low Crss (Typ.

5 pF) ? 100% Avalanche Tested ? Improved dv/dt Capability ? RoHS Compliant Applications ? LCD/LED TV ? Lighting ? Uninterruptible Power Supply ? AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor'

s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET'

s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. TO-220F G D S G S D Absolute Maximum Ratings TC = 25o C unless otherwise noted. Thermal Characteristics Symbol Parameter FDPF5N50UT Unit VDSS Drain to Source Voltage

500 V VGSS Gate to Source Voltage ±30 V ID Drain Current - Continuous (TC = 25o C) 4* A - Continuous (TC = 100o C) 2.4* IDM Drain Current - Pulsed (Note 1) 16* A EAS Single Pulsed Avalanche Energy (Note 2)

216 mJ IAR Avalanche Current (Note 1)

4 A EAR Repetitive Avalanche Energy (Note 1) 8.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3)

20 V/ns PD Power Dissipation (TC = 25oC)

28 W - Derate above 25oC 0.22 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8 from Case for

5 Seconds

300 oC Symbol Parameter FDPF5N50UT Unit RθJC Thermal Resistance, Junction to Case, Max. 4.5 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 *Drain current limited by maximum junction temperature FDPF5N50UT ― N-Channel UniFET TM Ultra FRFET TM MOSFET ?2012 Fairchild Semiconductor Corporation FDPF5N50UT Rev. C2 www.fairchildsemi.com

2 Package Marking and Ordering Information Electrical Characteristics TC = 25o C unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDPF5N50UT FDPF5N50UT TO-220F Tube N/A N/A

50 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID =

250 μA, VGS =

0 V, TJ = 25oC

500 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID =

250 μA, Referenced to 25oC - 0.7 - V/oC IDSS Zero Gate Voltage Drain Current VDS =

500 V, VGS =

0 V - -

25 μA VDS =

400 V, TC = 125oC - -

250 IGSS Gate to Body Leakage Current VGS = ±30 V, VDS =

0 V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID =

250 μA

3 -

5 V RDS(on) Static Drain to Source On Resistance VGS =

10 V, ID =

2 A - 1.65

2 Ω gFS Forward Transconductance VDS =

40 V, ID =

2 A - 4.8 - S Ciss Input Capacitance VDS =

25 V, VGS =

0 V, f =

1 MHz -