PDF《FDPF5N50UT》

485 650 pF Coss Output Capacitance -

65 90 pF Crss Reverse Transfer Capacitance -

5 8 pF Qg(tot) Total Gate Charge at 10V VDS =

400 V, ID =

4 A, VGS =

10 V (Note 4) -

11 15 nC Qgs Gate to Source Gate Charge -

3 - nC Qgd Gate to Drain Miller Charge -

5 - nC td(on) Turn-On Delay Time VDD =

250 V, ID =

4 A, VGS =

10 V, RG =

25 Ω (Note 4) -

14 38 ns tr Turn-On Rise Time -

21 52 ns td(off) Turn-Off Delay Time -

27 64 ns tf Turn-Off Fall Time -

20 50 ns IS Maximum Continuous Drain to Source Diode Forward Current - -

4 A ISM Maximum Pulsed Drain to Source Diode Forward Current - -

16 A VSD Drain to Source Diode Forward Voltage VGS =

0 V, ISD =

4 A - - 1.6 V trr Reverse Recovery Time VGS =

0 V, ISD =

4 A, dIF/dt = 100A/μs -

36 - ns Qrr Reverse Recovery Charge -

33 - nC Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L =

27 mH, IAS =

4 A, VDD =

50 V, RG =

25 Ω, starting TJ = 25°C. 3: ISD ≤

4 A, di/dt ≤

200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially Independent of Operating Temperature Typical Characteristics FDPF5N50UT ― N-Channel UniFET TM Ultra FRFET TM MOSFET ?2012 Fairchild Semiconductor Corporation FDPF5N50UT Rev. C2 www.fairchildsemi.com

3 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4 5

6 7

8 0.1

1 10

150 o C *Notes: 1. VDS = 20V 2. 250μs Pulse Test

25 o C I D ,Drain Current[A] VGS,Gate-Source Voltage[V] 0.1

1 10 0.1

1 10

30 *Notes: 1. 250μs Pulse Test 2. TC =

25 o C VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V I D ,Drain Current[A] VDS,Drain-Source Voltage[V] 0.02

0 6

12 18 1.4 1.8 2.2 2.6 *Note: TJ =

25 o C VGS = 20V VGS = 10V R DS(ON) [ Ω ] , Drain-Source On-Resistance ID, Drain Current [A] 0.4 1.0 1.6 2.2

1 10 *Notes: 1. VGS = 0V 2. 250μs Pulse Test

150 o C I S , Reverse Drain Current [A] VSD , Body Diode Forward Voltage [V]

25 o C

30 0.1

1 10

0 200

400 600

800 1000 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz Crss Capacitances [pF] VDS, Drain-Source Voltage [V]

30 0

4 8

12 0

2 4

6 8

10 *Note: ID = 4A VDS = 100V VDS = 250V VDS = 400V V GS , Gate-Source Voltage [V] Qg, Total Gate Charge [nC] FDPF5N50UT ― N-Channel UniFET TM Ultra FRFET TM MOSFET ?2012 Fairchild Semiconductor Corporation FDPF5N50UT Rev. C2 www.fairchildsemi.com

4 Z θ JC (t), Thermal Response [ o C/W] t1, Rectangular Pulse Duration [sec] Typical Performance Characteristics (Continued) F........