PDF《LMR12010》

1 BOOST 用于驱动内部 NMOS 控制开关的升压电压.在BOOST 和SW 引脚之间连接了一个自 举电容器.

2 GND 信号和电源接地引脚.将反馈网络的底端电阻器布设在尽可能靠近该引脚的地方,以实 现准确的调节.

3 FB 反馈引脚.连接至外部电阻分压器,以设定输出电压.

4 EN 使能控制输入.当该引脚为逻辑高电平时,将使能器件操作.不得允许此引脚浮置或高 于VIN + 0.3 V.

5 VIN 输入电源.将一个旁路电容器连接至该引脚.

6 SW 输出开关.连接至电感器、箝位二极管和自举电容器. Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. VIN -0.5V to 24V SW Voltage -0.5V to 24V Boost Voltage -0.5V to 30V Boost to SW Voltage -0.5V to 6.0V FB Voltage -0.5V to 3.0V EN Voltage -0.5V to (VIN + 0.3V) Junction Temperature 150°C ESD Susceptibility (Note 2) 2kV Storage Temp. Range -65°C to 150°C For soldering specifications: see product folder at www.national.com and www.national.com/ms/MS/MS- SOLDERING.pdf Operating Ratings (Note 1) VIN 3V to 20V SW Voltage -0.5V to 20V Boost Voltage -0.5V to 25V Boost to SW Voltage 1.6V to 5.5V Junction Temperature Range ?40°C to +125°C Thermal Resistance θJA (Note 3) 118°C/W Electrical Characteristics Specifications with standard typeface are for TJ = 25°C, and those in boldface type apply over the full Operating Temperature Range (TJ = -40°C to 125°C). VIN = 5V, VBOOST - VSW = 5V unless otherwise specified. Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. Symbol Parameter Conditions Min (Note 4) Typ (Note 5) Max (Note 4) Units VFB Feedback Voltage 0.784 0.800 0.816 V ΔVFB/ΔVIN Feedback Voltage Line Regulation VIN = 3V to 20V 0.01 % / V IFB Feedback Input Bias Current Sink/Source

10 250 nA UVLO Undervoltage Lockout VIN Rising 2.74 2.90 V Undervoltage Lockout VIN Falling 2.0 2.3 UVLO Hysteresis 0.30 0.44 0.62 FSW Switching Frequency LMR12010X 1.2 1.6 1.9 MHz LMR12010Y 2.2 3.0 3.6 DMAX Maximum Duty Cycle LMR12010X

85 92 % LMR12010Y

78 85 DMIN Minimum Duty Cycle LMR12010X

2 % LMR12010Y

8 RDS(ON) Switch ON Resistance VBOOST - VSW = 3V

300 600 m? ICL Switch Current Limit VBOOST - VSW = 3V 1.2 1.7 2.5 A IQ Quiescent Current Switching 1.5 2.5 mA Quiescent Current (shutdown) VEN = 0V

30 nA IBOOST Boost Pin Current LMR12010X (50% Duty Cycle) 2.5 3.5 mA LMR12010Y (50% Duty Cycle) 4.25 6.0 VEN_TH Shutdown Threshold Voltage VEN Falling 0.4 V Enable Threshold Voltage VEN Rising 1.8 IEN Enable Pin Current Sink/Source

10 nA ISW Switch Leakage

40 nA Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see Electrical Characteristics. Note 2: Human body model, 1.5k? in series with 100pF. Note 3: Thermal shutdown will occur if the junction temperature exceeds 165°C. The maximum power dissipation is a function of TJ(MAX) , θJA and TA . The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) C TA)/θJA . All numbers apply for packages soldered directly onto a

3 x

3 PC board with 2oz. copper on

4 layers in still air. For a

2 layer board using

1 oz. copper in still air, θJA = 204°C/W. Note 4: Guaranteed to National'