PDF《Six-Pack》

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2010 IXYS All rights reserved

1 -

7 20100831d MWI 50-12T7T IXYS reserves the right to change limits, test conditions and dimensions.

Pin configuration see outlines. Part name (Marking on product) MWI 50-12T7T E72873 IC25 =

80 A VCES =

1200 V VCE(sat) typ. = 1.7 V 23,

24 21,

22 19,

20 9

10 11

12 5

6 7

8 1

2 3

4 25,

26 27,

28 NTC

17 18 15,

16 13,

14 Features: ? Trench IGBT technology ? low saturation voltage ? low switching losses ? square RBSOA, no latch up ? high short circuit capability ? positive temperature coefficient for easy parallelling ? MOS input, voltage controlled ? ultra fast free wheeling diodes ? solderable pins for PCB mounting ? package with copper base plate Application: ? AC motor drives ? Solar inverter ? Medical equipment ? Uninterruptible power supply ? Air-conditioning systems ? Welding equipment ? Switched-mode and resonant-mode power supplies Package: ? E2-Pack standard outline ? Insulated copper base plate ? Soldering pins for PCB mounting ? Temperature sense included Six-Pack Trench IGBT ?

2010 IXYS All rights reserved

2 -

7 20100831d MWI 50-12T7T IXYS reserves the right to change limits, test conditions and dimensions. Output Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage TVJ = 25°C

1200 V VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient ±20 ±30 V V IC25 IC80 collector current TC = 25°C TC = 80°C

80 50 A A Ptot total power dissipation TC = 25°C

270 W VCE(sat) collector emitter saturation voltage IC =

50 A;

VGE =

15 V TVJ = 25°C on chip level TVJ = 125°C 1.7 2.0 2.15 V V VGE(th) gate emitter threshold voltage IC =

2 mA;

VGE = VCE TVJ = 25°C

5 5.8 6.5 V ICES collector emitter leakage current VCE = VCES;

VGE =

0 V TVJ = 25°C TVJ = 125°C

2 2 mA mA IGES gate emitter leakage current VGE = ±20 V

400 nA Cies input capacitance VCE =

25 V;

VGE =

0 V;

f =

1 MHz

3500 pF QG(on) total gate charge VCE =

600 V;

VGE = ±15 V;

IC =

50 A

470 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load TVJ = 125°C VCE =

600 V;

IC =

50 A VGE = ±15 V;

RG =

18 W LS =

70 nH

90 50

520 90

5 6.5 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V;

RG =

18 W TVJ = 125°C VCEK =

1150 V

100 A SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE =

900 V;

VGE = ±15 V;

TVJ = 125°C RG =

18 W;

non-repetitive

200 10 ?s A RthJC thermal resistance junction to case (per IGBT) 0.46 K/W Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitve reverse voltage TVJ = 25°C

1200 V IF25 IF80 forward current TC = 25°C TC = 80°C

85 57 A A VF forward voltage IF =

60 A;

VGE =

0 V TVJ = 25°C TVJ = 125°C 1.95 1.95 2.2 V V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR =

600 V diF /dt = -1200 A/?s TVJ = 125°C IF =

60 A;

VGE =

0 V

8 60

350 2.5 ?C A ns mJ RthJC thermal resistance junction to case (per diode) 0.6 K/W TC = 25°C unless otherwise stated ?

2010 IXYS All rights reserved

3 -

7 20100831d MWI 50-12T7T IXYS reserves the right to change limits, test conditions and dimensions. Temperature Sensor NTC Ratings Symbol Definitions Conditions min. typ. max. Unit R25 B25/50 resistance TC = 25°C 4.75 5.0