编辑: hys520855 | 2019-07-04 |
3375 5.25 kW K Module Ratings Symbol Definitions Conditions min. typ. max. Unit TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature -40 -40
125 150
125 °C °C °C VISOL isolation voltage IISOL <
1 mA;
50/60 Hz
2500 V~ CTI comparative tracking index
200 Md mounting torque (M5) 2.7 3.3 Nm dS dA creep distance on surface strike distance through air
6 6 mm mm Rpin-chip resistance pin to chip
5 mW RthCH thermal resistance case to heatsink with heatsink compound 0.02 K/W Weight
180 g Equivalent Circuits for Simulation Ratings Symbol Definitions Conditions min. typ. max. Unit V0 R0 IGBT T1 - T6 TVJ = 125°C 1.0
20 V mW V0 R0 Diode D1 - D6 TVJ = 125°C 1.1 14.2 V mW I V0 R0 ?
2010 IXYS All rights reserved
4 -
7 20100831d MWI 50-12T7T IXYS reserves the right to change limits, test conditions and dimensions. Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MWI 50-12T7T MWI50-12T7T Box
6 501972 Circuit Diagram Outline Drawing Dimensions in mm (1 mm = 0.0394 ) X
0 baseplate typ.
100 ?m convex over
75 mm before mounting 20.5 ±0.1
17 ±0.5
7 -0.5 ? 2.1;
l=6 0.2 ± 0.2 ± ±0.1 ±0.2 ±0.3 Y B ? 2.5 ? 2.1 Detail Z +0.3 ?
6 6 1.5 Z Detail X 0.05 ± 0.02 ± 0.8 1.2 Detail Y 0.05 ± ±1° 15° 0.8
45 38.4
32 11 ?5.5 72.7 75.7 82.3
93 107.5 3.5 -0.5 42.69 38.88 54.12 50.31 61.74 65.55 76.98 73.17 19.83 16.02 31.26 27.45
0 20.95 11.43 7.62 7.62 11.43 20.95 76.98 61.74
2 1
6 5
3 4
8 7
9 10
12 11 86.1 73.17 57.93 38.88 42.69 23.64 19.83
24 21
22 23
19 20
17 18 n0.4 j AB A
15 14
13 27
28 16
25 26 23,
24 21,
22 19,
20 9
10 11
12 5
6 7
8 1
2 3
4 25,
26 27,
28 NTC
17 18 15,
16 13,
14 Product Marking ?
2010 IXYS All rights reserved
5 -
7 20100831d MWI 50-12T7T IXYS reserves the right to change limits, test conditions and dimensions. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0 20
40 60
80 100
0 20
40 60
80 100
0 2
4 6
8 10
12 14 IC [A] VCE [V] IC [A] E [mJ] VGE =
15 V
4 5
6 7
8 9
10 11
12 0
20 40
60 80
100 0
1 2
3 4
5 0
20 40
60 80
100 TVJ = 125°C TVJ = 125°C TVJ = 25°C
9 V
11 V VCE =
20 V TVJ = 125°C TVJ = 25°C
10 20
30 40
50 60
70 0
2 4
6 8
10 12 RG [Ω] Eoff Eon Erec IC [A] VGE [V] VCE [V] IC [A] VGE =
13 V
15 V
17 V
19 V E [mJ] Fig.
1 Typ. outpurt characteristics
0 100
200 300
400 500
600 -15 -10 -5
0 5
10 15
20 Qg [nC] VGE [V] Fig.
2 Typ. outpurt characteristics Fig.
3 Typ. transfer characteristics Fig.
4 Typ. turn-on gate charge Fig.
5 Typical switching losses versus collector current impedance Fig.
6 Typical switching losses versus gate resistancae IC =
50 A VCE =
600 V VCE =
600 V VGE = ±15 V RG =
18 Ω TVJ = 125°C VCE =
600 V VGE = ±15 V IC =
50 A TVJ = 125°C E off Eon E rec Inverter T1 - T6 ?
2010 IXYS All rights reserved
6 -
7 20100831d MWI 50-12T7T IXYS reserves the right to change limits, test conditions and dimensions.
600 700
800 900
1000 1100
1200 1300
2 4
6 8
10 12
14 0.0 0.5 1.0 1.5 2.0 2.5 3.0
0 20
40 60
80 100
120 Qrr [?C] IF [A] VF [V] diF /dt [A/?s] TVJ = 125°C VR =
600 V
30 A
60 A
120 A Fig.
7 Typ. Forward current versus VF Fig.
8 Typ. reverse recovery charge Qrr vs. di/dt
600 700
800 900
1000 1100
1200 1300
0 10
20 30
40 50
60 70
80 90 IRR [A] diF /dt [A/?s] TVJ = 125°C VR =