PDF《UniFET》

?2007 Fairchild Semiconductor Corporation

1 www.

fairchildsemi.com FDP7N50U/FDPF7N50U REV. B FDP7N50U/FDPF7N50U 500V N-Channel MOSFET March

2007 UniFETTM FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features ? 5A, 500V, RDS(on) = 1.5? @VGS =

10 V ? Low gate charge ( typical 12.8 nC) ? Low Crss ( typical

9 pF) ? Fast switching ? 100% avalanche tested ? Improved dv/dt capability Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild'

s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switched mode power supplies and active power factor correction. Absolute Maximum Ratings Thermal Characteristics D G S TO-220 FDP Series G S D TO-220F FDPF Series G S D Symbol Parameter FDP7N50U FDPF7N50U Unit VDSS Drain-Source Voltage

500 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)

5 3.0

5 * 3.0 * A A IDM Drain Current - Pulsed (Note 1)

20 20 * A VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2)

270 mJ IAR Avalanche Current (Note 1)

5 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25°C

89 0.71

39 0.31 W W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for

5 Seconds

300 °C Symbol Parameter FDP7N50U FDPF7N50U Unit RθJC Thermal Resistance, Junction-to-Case 1.4 3.2 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W * Drain current limited by maximum junction temperature.

2 www.fairchildsemi.com FDP7N50U/FDPF7N50U REV. B FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Package Marking and Ordering Information Electrical Characteristics TC = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 7A, VDD = 50V, L=10mH, RG = 25?, Starting TJ = 25°C 3. ISD ≤ 7A, di/dt ≤ 200A/?s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300?s, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP7N50U FDP7N50U TO-220 -- --

50 FDPF7N50U FDPF7N50U TO-220F -- --

50 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250?A

500 -- -- V ?BVDSS / ?TJ Breakdown Voltage Temperature Coefficient ID = 250?A, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C -- -- -- --

25 250 ?A ?A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- --

100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250?A 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 2.5A -- 1.2 1.5 ? gFS Forward Transconductance VDS = 40V, ID = 2.5A (Note 4) -- 2.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz --

720 940 pF Coss Output Capacitance --

95 190 pF Crss Reverse Transfer Capacitance --

9 13.5 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250V, ID = 7A RG = 25? (Note 4, 5) --