PDF《UniFET》

6 20 ns tr Turn-On Rise Time --

55 120 ns td(off) Turn-Off Delay Time --

25 60 ns tf Turn-Off Fall Time --

35 80 ns Qg Total Gate Charge VDS = 400V, ID = 7A VGS = 10V (Note 4, 5) -- 12.8 16.6 nC Qgs Gate-Source Charge -- 3.7 -- nC Qgd Gate-Drain Charge -- 5.8 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- --

5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- --

20 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A -- -- 1.6 V trr Reverse Recovery Time VGS = 0V, IS = 7A dIF/dt =100A/?s (Note 4) --

40 -- ns Qrr Reverse Recovery Charge -- 0.04 -- ?C

3 www.fairchildsemi.com FDP7N50U/FDPF7N50U REV. B FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

0 10

20 30

40 50

0 5

10 15

20 VGS Top : 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Notes : 1. 250? s Pulse Test 2. TC =

25 I D , Drain Current [A] VDS , Drain-Source Voltage [V]

2 4

6 8

10 10 -2

10 -1

10 0

10 1 Note 1. VDS = 40V 2. 250? s Pulse Test

150 25 I D , Drain Current [A] VGS , Gate-Source Voltage [V]

0 5

10 15

20 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 20V VGS = 10V Note : TJ =

25 R DS(ON) [ ? ],Drain-Source On-Resistance ID , Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

10 -1

10 0

10 1

25 150 Notes : 1. VGS = 0V 2. 250? s Pulse Test I DR , Reverse Drain Current [A] VSD , Source-Drain Voltage [V]

10 0

10 1

10 100

1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Notes : 1. VGS =

0 V 2. f =

1 MHz Crss Coss Ciss Capacitance [pF] VDS , Drain-Source Voltage [V]

0 5

10 15

0 2

4 6

8 10

12 VDS = 250V VDS = 100V VDS = 400V Note : ID =

7 A V GS , Gate-Source Voltage [V] QG , Total Gate Charge [nC]

4 www.fairchildsemi.com FDP7N50U/FDPF7N50U REV. B FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. Maximum Drain Current vs. Temperature Vs. Case Temperature Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area - FDP7N50U - FDPF7N50U -100 -50

0 50

100 150

200 0.8 0.9 1.0 1.1 1.2 ? Notes : 1. VGS =

0 V 2. ID =

250 ?A BV DSS , (Normalized) Drain-Source Breakdown Voltage TJ , Junction Temperature [ o C]

25 50

75 100

125 150

0 2

4 6 I D , Drain Current [A] TC , Case Temperature [ ]

10 0

10 1

10 2

10 -2

10 -1

10 0

10 1

10 us Operation in This Area is Limited by R DS(on) DC

10 ms

1 ms

100 us Notes : 1. TC =

25 o C 2. TJ =

150 o C 3. Single Pulse I D , Drain Current [A] VDS , Drain-Source Voltage [V]

10 0

10 1

10 2

10 -2

10 -1

10 0

10 1

10 us Operation in This Area is Limited by R DS(on) DC

10 ms

1 ms

100 us Notes : 1. TC =

25 o C 2. TJ =

150 o C 3. Single Pulse I D , Drain Current [A] VDS , Drain-Source Voltage [V]

5 www.fairchildsemi.com FDP7N50U/FDPF7N50U REV. B FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Figure 10-1. Transient Thermal Response Curve - FDP7N50U Figure 10-2. Transient Thermal Response Curve - FDPF7N50U

10 -5

10 -4

10 -3

10 -2

10 -1

10 0

10 1

10 -2

10 -1

10 0 N otes : 1. Zθ JC (t) = 1.4 /W M ax. 2. D uty Factor, D =t1 /t2 3. TJM - TC = PDM * Zθ JC (t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 Z θ JC (t), Thermal Response t1 , Square W ave Pulse Duration [sec] t1 PDM t2