PDF《IRFR220B / IRFU220B》

?2001 Semiconductor Components Industries, LLC.

October-2017,Rev

2 Publication Order Number: IRFU220B/D IRFR220B / IRFU220B IRFR220B / IRFU220B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor'

s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Features ? 4.6A, 200V, RDS(on) = 0.8? @VGS =

10 V ? Low gate charge ( typical

12 nC) ? Low Crss ( typical

10 pF) ? Fast switching ? 100% avalanche tested ? Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter IRFR220B / IRFU220B Units VDSS Drain-Source Voltage

200 V ID Drain Current - Continuous (TC = 25°C) 4.6 A - Continuous (TC = 100°C) 2.9 A IDM Drain Current - Pulsed (Note 1)

18 A VGSS Gate-Source Voltage ±

30 V EAS Single Pulsed Avalanche Energy (Note 2)

65 mJ IAR Avalanche Current (Note 1) 4.6 A EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C)

40 W - Derate above 25°C 0.32 W/°C TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8 from case for

5 seconds

300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 3.14 °C/W RθJA Thermal Resistance, Junction-to-Ambient * --

50 °C/W RθJA Thermal Resistance, Junction-to-Ambient --

110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? S D G I-PAK IRFU Series D-PAK IRFR Series G S D G S D www.onsemi.com

2 IRFR220B / IRFU220B (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 4.6mH, IAS = 4.6A, VDD = 50V, RG =

25 ?, Starting TJ = 25°C 3. ISD ≤ 5.0A, di/dt ≤ 300A/?s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300?s, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS =

0 V, ID =

250 ?A

200 -- -- V ?BVDSS / ?TJ Breakdown Voltage Temperature Coefficient ID =

250 ?A, Referenced to 25°C -- 0.2 -- V/°C IDSS Zero Gate Voltage Drain Current VDS =

200 V, VGS =

0 V -- --

10 ?A VDS =

160 V, TC = 125°C -- --

100 ?A IGSSF Gate-Body Leakage Current, Forward VGS =

30 V, VDS =

0 V -- --

100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS =

0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID =

250 ?A 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS =

10 V, ID = 2.3 A -- 0.65 0.8 ? gFS Forward Transconductance VDS =

40 V, ID = 2.3 A -- 3.7 -- S Dynamic Characteristics Ciss Input Capacitance VDS =

25 V, VGS =

0 V, f = 1.0 MHz --

300 390 pF Coss Output Capacitance --

50 65 pF Crss Reverse Transfer Capacitance --

10 13 pF Switching Characteristics td(on) Turn-On Delay Time VDD =