编辑: ddzhikoi | 2019-07-04 |
100 V, ID = 5.0 A, RG =
25 ? -- 6.8
24 ns tr Turn-On Rise Time --
45 100 ns td(off) Turn-Off Delay Time --
30 70 ns tf Turn-Off Fall Time --
40 90 ns Qg Total Gate Charge VDS =
160 V, ID = 5.0 A, VGS =
10 V --
12 16 nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge -- 5.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- --
18 A VSD Drain-Source Diode Forward Voltage VGS =
0 V, IS = 4.6 A -- -- 1.5 V trr Reverse Recovery Time VGS =
0 V, IS = 5.0 A, dIF / dt =
100 A/?s --
130 -- ns Qrr Reverse Recovery Charge -- 0.58 -- ?C IRFR220B / IRFU220B
0 2
4 6
8 10
12 14
0 2
4 6
8 10
12 VDS = 100V VDS = 40V VDS = 160V Note: ID =5.0A V GS , Gate-Source Voltage [V] QG , Total GateCharge[nC]
10 -1
10 0
10 1
0 200
400 600
800 Coss Ciss =Cgs +Cgd (Cds =shorted) Coss =Cds +Cgd Crss =Cgd Notes: 1. VGS =0V 2. f =1MHz Crss Ciss Capacitance [pF] VDS , Drain-SourceVoltage [V]
0 3
6 9
12 15 0.0 0.8 1.6 2.4 3.2 4.0 VGS = 20V VGS = 10V Note: TJ = 25℃ R DS(ON) [ Ω ], Drain-Source On-Resistance ID , DrainCurrent [A]
2 4
6 8
10 10 -1
10 0
10 1
150 o C
25 o C -55 o C Notes: 1. VDS =40V 2. 250μ sPulseTest I D , Drain Current [A] VGS , Gate-SourceVoltage[V]
10 -1
10 0
10 1
10 -1
10 0
10 1 VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottom: 5.0V Notes: 1. 250μ sPulseTest 2. TC =25℃ I D , Drain Current [A] VDS , Drain-SourceVoltage[V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10 -1
10 0
10 1 150℃ Notes: 1. VGS =0V 2. 250μ sPulseTest 25℃ I DR , Reverse Drain Current [A] VSD , Source-Drainvoltage[V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics www.onsemi.com
3 IRFR220B / ........