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FN3994 Rev 0.

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8 April

1995 FN3994 Rev 0.00 April

1995 ACTS08MS Radiation HardenedQuad 2-Input AND Gate DATASHEET Pinouts

14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW

14 LEAD CERAMIC FLAT PACK MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW A1 B1 Y1 A2 B2 Y2 GND VCC B4 A4 Y4 B3 A3 Y3

1 2

3 4

5 6

7 14

13 12

11 10

9 8

14 13

12 11

10 9

8 2

3 4

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7 1 A1 B1 Y1 A2 B2 Y2 GND VCC B4 A4 Y4 B3 A3 Y3 Features ? 1.25 Micron Radiation Hardened SOS CMOS ? Total Dose 300K RAD (Si) ? Single Event Upset (SEU) Immunity

80 MEV-cm2 /mg ? Dose Rate Upset >

1011 RAD (Si)/s, 20ns Pulse ? Latch-Up Free Under Any Conditions ? Military Temperature Range: -55o C to +125o C ? Significant Power Reduction Compared to ALSTTL Logic ? DC Operating Voltage Range: 4.5V to 5.5V ? Input Logic Levels - VIL = 0.8V Max - VIH = VCC/2 Min ? Input Current ?1?A at VOL, VOH Description The Intersil ACTS08MS is a radiation hardened quad 2-Input AND Gate. A high on both inputs forces the output to a high logic level. The ACTS08MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of a radiation hardened, high-speed, CMOS/SOS Logic Family. Truth Table INPUTS OUTPUT An Bn Yn L L L L H L H L L H H H NOTE: L = Logic Level Low, H = Logic Level High Functional Diagram An Bn (1, 4, 9, 12) (2, 5, 10, 13) Yn (3, 6, 8, 11) Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE ACTS08DMSR -55o C to +125o C Intersil Class S Equivalent

14 Lead SBDIP ACTS08KMSR -55o C to +125o C Intersil Class S Equivalent

14 Lead Ceramic Flatpack ACTS08D/Sample +25oC Sample

14 Lead SBDIP ACTS08K/Sample +25oC Sample

14 Lead Ceramic Flatpack ACTS08HMSR +25oC Die Die ACTS08MS FN3994 Rev 0.00 Page

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1995 Absolute Maximum Ratings Reliability Information Supply Voltage 0.5V to +6.0V Input Voltage Range.0.5V to VCC +0.5V DC Input Current, Any One Input ?????????????????????????????????????????????????10mA DC Drain Current, Any One Output??????????????????????????????????????????????50mA Storage Temperature Range 65o C to +150o C Lead Temperature (Soldering 10s)265oC Junction Temperature (TJ)175oC ESD Classification Class

1 (All voltages reference to VSS) Thermal Impedance ?JA ?JC DIP.74o C/W 24o C/W Flatpack.116oC/W 30oC/W Maximum Package Power Dissipation at +125oC DIP.0.7W Flatpack.0.4W Maximum Device Power Dissipation.TBD)W Gate Count

42 Gates CAUTION: As with all semiconductors, stress listed under Absolute Maximum Ratings may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under Electrical Performance Characteristics are the only conditions recommended for satisfactory device operation. Operating Conditions Supply Voltage (VCC)4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF)10ns/V Max Operating Temperature Range (TA)55oC to +125oC Input Low Voltage (VIL)0.0V to 0.8V Input High Voltage (VIH)VCC to VCC/2V TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL (NOTE 1) CONDITIONS GROUP A SUB- GROUPS TEMPERATURE LIMITS UNITS MIN MAX Supply Current ICC VCC = 5.5V, VIN = VCC or GND

1 +25o C -

5 ?A 2,

3 +125o C, -55o C -

100 ?A Delta ICC DICC VCC = 5.5V VIN = VCC or GND

1 Input = 3.4V 1, 2,

3 +25o C, +125o C, -55o C - 1.6 mA Output Current (Source) IOH VCC = VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V (Note 2)

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