PDF《IRF3805S-7PPbF IRF3805L-7PPbF》

IRF3805S-7PPbF IRF3805L-7PPbF HEXFET? Power MOSFET VDSS = 55V RDS(on) = 2.

6m?? ID = 160A HEXFET? is a registered trademark of International Rectifier. Description ThisHEXFET? PowerMOSFETutilizesthelatest processing techniques to achieve extremely low on-resistancepersiliconarea. Additionalfeatures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combinetomakethisdesignanextremelyefficient and reliable device for use in a wide variety of applications. S D G Features l Advanced Process Technology l UltraLowOn-Resistance l 175°COperatingTemperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S (Pin 2, 3, 5, 6, 7) G (Pin 1) Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current c A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for

10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case j CCC 0.50 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.50 CCC RθJA Junction-to-Ambient j CCC

62 RθJA Junction-to-Ambient (PCB Mount, steady state) ij CCC

40 Max.

240 170

1000 160

10 lbf?in (1.1N?m)

300 2.0 ±

20 440

680 See Fig.12a,12b,15,16

300 (1.6mm from case ) -55 to +

175 D2Pak7Pin IRF3805S-7PPbF TO-263CA

7 Pin IRF3805L-7PPbF

1 www.irf.com ?

2013 International Rectifier Submit Datasheet Feedback October 25,

2013 IRF3805S/L-7PPbF www.irf.com ?

2013 International Rectifier Submit Datasheet Feedback October 25,

2013 2 Notes: ? Repetitive rating;

pulse width limited by max. junction temperature. (See fig. 11). ? Limited by TJmax, starting TJ = 25°C, L=0.043mH, RG = 25?, IAS = 140A, VGS =10V. Part not recommended for use above this value. ? Pulse width ≤ 1.0ms;

duty cycle ≤ 2%. ? Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from

0 to 80% VDSS. ? Limited by TJmax , see Fig.12a, 12b, 15,

16 for typical repetitive avalanche performance. ? This value determined from sample failure population. 100% tested to this value in production. ? This is applied to D2Pak, when mounted on

1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ? Rθ is measured at TJ of approximately 90°C. ? Solder mounted on IMS substrate. S D G S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage

55 CCC CCC V ?ΒVDSS/?TJ Breakdown Voltage Temp. Coefficient CCC 0.05 CCC V/°C RDS(on) SMD Static Drain-to-Source On-Resistance CCC 2.0 2.6 m? VGS(th) Gate Threshold Voltage 2.0 CCC 4.0 V gfs Forward Transconductance

110 CCC CCC S IDSS Drain-to-Source Leakage Current CCC CCC

20 ?A CCC CCC

250 IGSS Gate-to-Source Forward Leakage CCC CCC

200 nA Gate-to-Source Reverse Leakage

200 Qg Total Gate Charge CCC

130 200 nC Qgs Gate-to-Source Charge CCC

53 CCC Qgd Gate-to-Drain ( Miller ) Charge CCC

49 CCC td(on) Turn-On Delay Time CCC