PDF《IRF3805S-7PPbF IRF3805L-7PPbF》

23 CCC ns tr Rise Time CCC

130 CCC td(off) Turn-Off Delay Time CCC

80 CCC tf Fall Time CCC

52 CCC LD Internal Drain Inductance CCC 4.5 CCC nH Between lead, 6mm (0.25in.) LS Internal Source Inductance CCC 7.5 CCC from package and center of die contact Ciss Input Capacitance CCC

7820 CCC pF Coss Output Capacitance CCC

1260 CCC Crss Reverse Transfer Capacitance CCC

610 CCC Coss Output Capacitance CCC

4310 CCC Coss Output Capacitance CCC

980 CCC Coss eff. Effective Output Capacitance CCC

1540 CCC Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current CCC CCC

240 (Body Diode) A ISM Pulsed Source Current CCC CCC

1000 (Body Diode)?? VSD Diode Forward Voltage CCC CCC 1.3 V trr Reverse Recovery Time CCC

45 68 ns Qrr Reverse Recovery Charge CCC

35 53 nC VDS = VGS, ID = 250?A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250?A Reference to 25°C, ID = 1mA VGS = 10V, ID = 140A e TJ = 25°C, IF = 140A, VDD = 28V di/dt = 100A/?s e TJ = 25°C, IS = 140A, VGS = 0V e showing the integral reverse p-n junction diode. VGS = 0V, VDS = 1.0V, ? = 1.0MHz VGS = 10V d MOSFET symbol VGS = 0V VDS = 25V VGS = 0V, VDS = 44V, ? = 1.0MHz Conditions VGS = 0V, VDS = 0V to 44V ? = 1.0MHz, See Fig.

5 RG = 2.4? ID = 140A VDS = 25V, ID = 140A VDD = 28V ID = 140A VGS = 20V VGS = -20V VDS = 44V VGS = 10V e IRF3805S/L-7PPbF www.irf.com ?

2013 International Rectifier Submit Datasheet Feedback October 25,

2013 3 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current 0.1

1 10

100 1000 VDS, Drain-to-Source Voltage (V) 0.1

1 10

100 1000

10000 I D , Drain-to-Source Current (A) VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V ≤60?s PULSE WIDTH Tj = 25°C 4.5V 0.1

1 10

100 1000 VDS, Drain-to-Source Voltage (V)

1 10

100 1000

10000 I D , Drain-to-Source Current (A) 4.5V ≤60?s PULSE WIDTH Tj = 175°C VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

2 4

6 8

10 VGS, Gate-to-Source Voltage (V) 1.0

10 100

1000 I D , Drain-to-Source Current (Α ) TJ = 25°C TJ = 175°C VDS = 25V ≤60?s PULSE WIDTH

0 20

40 60

80 100

120 ID,Drain-to-Source Current (A)

0 50

100 150

200 250 G fs , Forward Transconductance (S) TJ = 25°C TJ = 175°C VDS = 10V 380?s PULSE WIDTH IRF3805S/L-7PPbF www.irf.com ?

2013 International Rectifier Submit Datasheet Feedback October 25,

2013 4 Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge vs. Gate-to-SourceVoltage Fig 5. Typical Capacitance vs. Drain-to-SourceVoltage Fig 7. Typical Source-Drain Diode Forward Voltage

1 10

100 VDS, Drain-to-Source Voltage (V)

100 1000

10000 100000 C, Capacitance(pF) VGS = 0V, f =

1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd Coss Crss Ciss

0 50

100 150 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 V GS , Gate-to-Source Voltage (V) VDS= 64V VDS= 40V ID= 140A 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) 0.1

1 10

100 1000

10000 I SD , Reverse Drain Current (A) TJ = 25°C TJ = 175°C VGS = 0V 0.1

1 10

100 VDS, Drain-to-Source Voltage (V) 0.1

1 10

100 1000

10000 I D , Drain-to-Source Current (A) Tc = 25°C Tj = 175°C Single Pulse 10msec 1msec OPERATION IN THIS AREA LIMITED BY R DS(on) 100?sec DC IRF3805S/L-7PPbF www.irf.com ?

2013 International Rectifier Submit Datasheet Feedback October 25,

2013 5 Fig 11. Maximum Effective Tran........