PDF《JCS4N60》

R 版本:201806G 1/14 N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS4N60 订货型号Order codes 印记Marking 封装Package 有卤-条管 Halogen-Tube 无卤-条管 Halogen-Free-Tube 有卤-编带 Halogen-Reel 无卤-编带 Halogen-Free-Reel JCS4N60V-V-B JCS4N60V-V-BR N/A N/A JCS4N60V IPAK JCS4N60R-R-B JCS4N60R-R-BR JCS4N60R-R-A JCS4N60R-R-AR JCS4N60R DPAK JCS4N60B-B-B JCS4N60B-B-BR N/A N/A JCS4N60B TO-262 JCS4N60S-S-B JCS4N60S-S-BR JCS4N60S-S-A JCS4N60S-S-AR JCS4N60S TO-263 JCS4N60C-C-B JCS4N60C-C-BR N/A N/A JCS4N60C TO-220C JCS4N60F-F-B JCS4N60F-F-BR N/A N/A JCS4N60F TO-220MF 主要参数 MAIN CHARACTERISTICS ID 4.

0 A VDSS

600 V Rdson(Vgs=10V) 2.5Ω Qg

27 nC 用途 ? 高频开关电源 ? 电子镇流器 ? UPS 电源 APPLICATIONS ? High efficiency switch mode power supplies ? Electronic lamp ballasts based on half bridge ? UPS 产品特性 ?低栅极电荷 ?低Crss (典型值 14pF) ?开关速度快 ?产品全部经过雪崩测试 ?高抗 dv/dt 能力 ?RoHS 产品 FEATURES ?Low gate charge ?Low Crss (typical 14pF ) ?Fast switching ?100% avalanche tested ?Improved dv/dt capability ?RoHS product 订货信息 ORDER MESSAGE 封装 Package R JCS4N60 版本:201806G 2/14 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) *漏极电流由最高结温限制 *Drain current limited by maximum junction temperature 项目Parameter 符号Symbol 数值Value 单位Unit JCS4N60 V/R JCS4N60 S/B/C JCS4N60F 最高漏极-源极直流电压 Drain-Source Voltage VDSS

600 V 连续漏极电流 Drain Current -continuous ID T=25℃ T=100℃ 4.0 4.0* A 2.5 2.5* A 最大脉冲漏极电流(注1) Drain Current - pulse (note 1) IDM

16 16* A 最高栅源电压 Gate-Source Voltage VGSS ±30 V 单脉冲雪崩能量(注2) Single Pulsed Avalanche Energy (note 2) EAS

240 mJ 雪崩电流(注1) Avalanche Current (note 1) IAR 4.0 A 重复雪崩能量(注1) Repetitive Avalanche Current (note 1) EAR 10.0 mJ 二极管反向恢复最大电压变化 速率(注3) Peak Diode Recovery dv/dt (note 3) dv/dt 5.5 V/ns 耗散功率 Power Dissipation PD TC=25℃ -Derate above 25℃

51 100

48 W 0.39 0.80 0.38 W/ ℃ 最高结温及存储温度 Operating and Storage Temperature Range TJ,TSTG -55~+150 ℃ 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes TL

300 ℃ R JCS4N60 版本:201806G 3/14 电特性 ELECTRICAL CHARACTERISTICS 项目Parameter 符号Symbol 测试条件 Tests conditions 最小 Min 典型 Typ 最大 Max 单位Units 关态特性 Off CCharacteristics 漏-源击穿电压 Drain-Source Voltage BVDSS ID=250μA, VGS=0V

600 - - V 击穿电压温度特性 Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ TJ ID=250μA, referenced to 25℃ - 0.65 - V/℃ 零栅压下漏极漏电流 Zero Gate Voltage Drain Current IDSS VDS=600V,VGS=0V, TC=25℃ - -

10 μA VDS=480V, TC=125℃ - -

100 μA 正向栅极体漏电流 Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V - -

100 nA 反向栅极体漏电流 Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V - - -100 nA 通态特性 On-Characteristics 阈值电压 Gate Threshold Voltage VGS(th) VDS = VGS , ID=250μA 2.0 - 4.0 V 静态导通电阻 Static Drain-Source On-Resistance RDS(ON) VGS =10V , ID=2A - 2.0 2.5 ? 正向跨导 Forward Transconductance gfs VDS = 40V , ID=2A(note 4) - 4.7 - S 动态特性 Dynamic Characteristics 输入电容 Input capacitance Ciss VDS=25V, VGS =0V, f=1.0MHZ -

710 920 pF 输出电容 Output capacitance Coss -

65 85 pF 反向传输电容 Reverse transfer capacitance Crss -

14 19 pF R JCS4N60 版本:201806G 4/14 电特性 ELECTRICAL CHARACTERISTICS 开关特性 Switching Characteristics 延迟时间 Turn-On delay time td(on) VDD=300V,ID=4A,RG=25? (note 4,5) -