PDF《JCS4N60》

20 50 ns 上升时间 Turn-On rise time tr -

55 120 ns 延迟时间 Turn-Off delay time td(off) -

70 150 ns 下降时间 Turn-Off Fall time tf -

55 120 ns 栅极电荷总量 Total Gate Charge Qg VDS =480V , ID=4A VGS =10V (note 4,5) -

27 30 nC 栅-源电荷 Gate-Source charge Qgs - 3.6 - nC 栅-漏电荷 Gate-Drain charge Qgd - 13.1 - nC 漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS - -

4 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM - -

16 A 正向压降 Drain-Source Diode Forward Voltage VSD VGS=0V, IS=4.0A - - 1.4 V 反向恢复时间 Reverse recovery time trr VGS=0V, IS=4.0A dIF/dt=100A/μs (note 4) -

330 - ns 反向恢复电荷 Reverse recovery charge Qrr - 2.67 - μC 热特性 THERMAL CHARACTERISTIC 项目Parameter 符号Symbol 最大 Max 单位 Unit JCS4N60V/R JCS4N60S/B/C JCS4N60F 结到管壳的热阻 Thermal Resistance, Junction to Case Rth(j-c) 2.50 1.25 2.60 ℃/ W 结到环境的热阻 Thermal Resistance, Junction to Ambient Rth(j-A)

83 62.5 36.9 ℃/ W 注释: 1:脉冲宽度由最高结温限制 2:L=25mH, IAS=4.0A, VDD=50V, RG=25 ?,起始结 温TJ=25℃ 3:ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温 TJ=25℃ 4:脉冲测试:脉冲宽度≤300μs,占空比≤2% 5:基本与工作温度无关 Notes: 1:Pulse width limited by maximum junction temperature 2:L=25mH, IAS=4.0A, VDD=50V, RG=25 ?,Starting TJ=25℃

3 : ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2% 5:Essentially independent of operating temperature R JCS4N60 版本:201806G 5/14 特征曲线 ELECTRICAL CHARACTERISTICS (curves) On-Region Characteristics Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics

2 4

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1 10 : Notes 1.250μs pulse test 2.VDS =40V 150℃ I D [A] VGS [V] 25℃ 0.1

1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 : Notes 1. 250μspulsetest 2. VGS =0V 25℃ 150℃ VSD [V] I DR [A]

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10 VGS Top 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V : Notes 1. 250μs pulse test 2. TC =25℃ I D [A] VDS [V]

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6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 : Note Tj =25℃ VGS =10V R DS (on) [ Ω ] ID [A] VGS =20V

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30 VDS =480V VDS =300V VDS =120V Qg Toltal Gate Charge [nC] V GS Gate Source Voltage[V] R JCS4N60 版本:201806G 6/14 特征曲线 ELECTRICAL CHARACTERISTICS (curves) -75 -50 -25

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150 0.90 0.95 1.00 1.05 1.10 1.15 : Notes 1. VGS =0V 2. ID =250μA Tj [ ] ℃ BV DSS (Normalized) Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature Maximum Safe Operating Area For JCS4N60F Maximum Drain Current vs. Case Temperature Maximum Safe Operating Area For JCS4N60V/R/S/B/C -75 -50 -25

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150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 : Notes 1. VGS =10V 2. ID =2.0A R DS (on ) (Normalized) Tj [ ] ℃ R JCS4N60 版本:201806G 7/14 特征曲线 ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve For JCS4N60S/B/C Transient Thermal Response Curve For JCS4N60F Transient Thermal Response Curve For JCS4N60V/R R........