PDF《TGF2929-FL》

8 of

20 - www.qorvo.com Load-Pull Smith Charts1,

2 Notes: 1. VD =

28 V, IDQ =

260 mA,

100 ?S PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page

15 for load-pull and source-pull reference planes. 11.7-Ω load-pull TRL fixtures are built with 20-mil RO4350B material. TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

9 of

20 - www.qorvo.com Load-Pull Smith Charts1,

2 Notes: 3. VD =

28 V, IDQ =

260 mA,

100 ?S PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 4. See page

15 for load-pull and source-pull reference planes. 11.7-Ω load-pull TRL fixtures are built with 20-mil RO4350B material. TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

10 of

20 - www.qorvo.com Typical Performance C Load-Pull Drive-up1,

2 Notes: 1.

100 ?S PW, 20% DC pulsed signal, VD =

28 V, IDQ =

260 mA 2. See page

15 for load-pull and source-pull reference planes where the performance was measured. TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

11 of

20 - www.qorvo.com Typical Performance C Load-Pull Drive-up1,

2 Notes: 1.

100 ?S PW, 20% DC pulsed signal, VD =

28 V, IDQ =

260 mA 2. See page

15 for load-pull and source-pull reference planes where the performance was measured. TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

12 of

20 - www.qorvo.com Power Drive-up Performance Over Temperatures Of 3.1 C 3.5 GHz EVB1 Notes: 1. VD =

28 V, IDQ =

260 mA,

100 ?S PW, 20% DC TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

13 of

20 - www.qorvo.com Power Drive-up Performance At

25 °C Of 3.1 C 3.5 GHz EVB1 Notes: 1. VD =

28 V, IDQ =

260 mA,

100 ?S PW, 20% DC TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

14 of

20 - www.qorvo.com Notes: 1. The TGF2929-FL will be marked with the TGF2929-FL designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number, and the ZZZ is an auto-generated serial number represents the last three digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number. Pin Configuration and Description, and Package Marking1 Pin Description Pin Symbol Description

1 VD / RF OUT Drain voltage / RF Output

2 VG / RF IN Gate voltage / RF Input

3 Base Source connected to ground TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

15 of

20 - www.qorvo.com Package Dimensions1, 2, 3,

4 Notes: 1. Unless oth........