PDF《TSSE3U45 - TSSE3U60》

TSSE3U45 - TSSE3U60 Taiwan Semiconductor

1 Version:G1707 3A, 45V - 60V Trench Schottky Rectifier FEATURES Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Lower power loss/ high efficiency High forward surge capability Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS Trench Schottky barrier rectifier is designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters MECHANICAL DATA Case: SOD-123HE Molding compound meets UL 94V-0 flammability rating Part no.

with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD

201 class

2 whisker test Polarity: As marked Weight: 0.022g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF(AV)

3 A VRRM

45 -

60 V IFSM

80 A TJ MAX

150 °C Package SOD-123HE Configuration Single die SOD-123HE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL TSSE3U45 TSSE3U60 UNIT Marking code on the device E3U45 E3U60 Maximum repetitive peak reverse voltage VRRM

45 60 V Working Peak Reverse Voltage VRWM V DC Blocking Voltage VRM V Maximum RMS voltage VRMS

32 42 V Forward current IF(AV)

3 A Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM

80 A Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C TSSE3U45 - TSSE3U60 Taiwan Semiconductor

2 Version:G1707 THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance per diode R?JL

23 °C/W Junction-to-ambient thermal resistance per diode R?JA

70 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage per diode (1) TSSE3U45 IF = 1A, TJ = 25°C VF 0.33 - V IF = 3A, TJ = 25°C 0.40 0.47 V IF = 1A, TJ =125°C 0.24 - V IF = 3A, TJ =125°C 0.34 0.44 V TSSE3U60 IF = 1A, TJ = 25°C 0.39 - V IF = 3A, TJ = 25°C 0.49 0.58 V IF = 1A, TJ =125°C 0.28 - V IF = 3A, TJ =125°C 0.43 0.52 V Reverse current @ rated VR per diode (2) TJ = 25°C IR -

1 mA TJ = 125°C -

50 mA Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX PACKAGE PACKING TSSE3Uxx (Note 1, 2) H RV G SOD-123HE 3,000 / 7" Reel RQ SOD-123HE 10,000 / 13" Reel Notes: 1. "x" defines voltage from 45V (TSSE3U45) to 60V (TSSE3U60) 2. Whole series with green compound (halogen-free) EXAMPLE P/N EXAMPLE P/N PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX DESCRIPTION TSSE3U45HRVG TSSE3U45 H RV G AEC-Q101 qualified Green compound TSSE3U45 - TSSE3U60 Taiwan Semiconductor

3 Version:G1707 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics

0 1

2 3

4 25

50 75

100 125

150 ORWARD CURRENT DERATING CURVE

10 100

1000 10000 0.1

1 10

100 f=1.0MHz Vslg=50mVp-p 0.01 0.1

1 10

100 10

20 30

40 50

60 70

80 90

100 TSSE3U45 TJ=125oC TJ=100oC TJ=25oC 0.01 0.1

1 10

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ=125oC TJ=100oC TJ=25oC CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) 0.001 0.01 0.1