PDF《MBRB15H45CT》

MBRB15H45CT www.

vishay.com Vishay General Semiconductor Revision: 26-Sep-2018

1 Document Number:

88782 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance DESIGN SUPPORT TOOLS FEATURES ? Power pack ? Guardring for overvoltage protection ? Low power loss, high efficiency ? Low forward voltage drop ? Low leakage current ? High forward surge capability ? High frequency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C ? AEC-Q101 qualified available? - Automotive ordering code: base P/NHE3_A ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL

94 V-0 flammability rating? Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified? ("_X" denotes revision code, e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102? HE3 suffix meets JESD

201 class

2 whisker test Polarity: as marked ? ? PRIMARY CHARACTERISTICS IF(AV)

2 x 7.5 A VRRM

45 V IFSM

150 A VF 0.55 V IR

50 μA TJ max.

175 °C Package D2PAK (TO-263AB) Circuit configuration Common cathode D2PAK (TO-263AB) PIN

1 PIN

2 K HEATSINK

1 2 K MBRB15H45CT click logo to get started Available Models MAXIMUM RATINGS (TC =

25 °C unless otherwise noted) PARAMETER SYMBOL MBRB15H45CT UNIT Maximum repetitive peak reverse voltage VRRM

45 V Working peak reverse voltage VRWM

45 Maximum DC blocking voltage VDC

45 Maximum average forward rectified current (fig. 1) total device IF(AV)

15 A per diode 7.5 Non-repetitive avalanche energy at

25 °C, IAS =

4 A, L =

10 mH per diode EAS

80 mJ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM

150 A Peak repetitive reverse surge current per diode at tp = 2.0 μs,

1 kHz IRRM 1.0 Peak non-repetitive reverse energy (8/20 μs waveform) ERSM

20 mJ Electrostatic discharge capacitor voltage? Human body model: C =

100 F, R = 1.5 k? VC

25 kV Voltage rate of change (rated VR) dV/dt

10 000 V/μs Operating junction and storage temperature range TJ, TSTG -65 to +175 °C MBRB15H45CT www.vishay.com Vishay General Semiconductor Revision: 26-Sep-2018

2 Document Number:

88782 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test:

300 μs pulse width,

1 % duty cycle (2) Pulse test: pulse width ?

40 ms Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TC =

25 °C unless otherwise noted) Fig.

1 - Forward Derating Curve Per Diode Fig.

2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode ELECTRICAL CHARACTERISTICS (TC =

25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MBRB15H45CT UNIT TYP. MAX. Maximum instantaneous forward voltage per diode VF (1) IF = 7.5 A TJ =