PDF《PTRA097008NB》

4600 Silicon Drive | Durham, NC

27703 | www.

wolfspeed.com Rev. 03.1, 2019-03-06 All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device―observe handling precautions! PTRA097008NB Package PG-HB2SOF-6-1 Thermally-Enhanced High Power RF LDMOS FET

630 W,

48 V,

920 C

960 MHz Description The PTRA097008NB is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the

920 to

960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed'

s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD =

50 V, IDQ =

600 mA, VGS(PEAK) = 2.4 V, POUT =

90 W avg, ?1 =

960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average =

10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 18.25

19 ― dB Drain Efficiency hD 46.5

49 ― % Adjacent Channel Power Ratio ACPR ― C29 C26 dBc Output PAR @ 0.01% CCDF OPAR 6.0 6.8 ― dB Features ? Broadband internal input and output matching ? Asymmetric design - Main: P1dB =

300 W typical - Peak: P1dB =

400 W typical ? Typical pulsed CW performance (10 ?s, 10% duty cycle, class AB test),

942 MHz,

48 V, combined outputs, Doherty configuration - Output power at P1dB =

180 W - Output power at P3dB =

600 W - Efficiency = 52% - Gain =

19 dB ? Capable of handing 10:1 VSWR at

48 V,

89 W (CW) output power ? Integrated ESD protection ? Human Body Model Class

2 (per ANSI/ESDA/ JEDEC JS-001) ? Low thermal resistance ? Pb-free and RoHS-compliant -60 -40 -20

0 20

40 60

0 4

8 12

16 20

24 25

30 35

40 45

50 55 Efficiency (%) Peak/Average Ratio (dB), Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD =

50 V, IDQ(MAIN) =

600 mA, VGS(PEAK) = 2.4 V, ? =

960 MHz, 3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF ra097008nb-gr1a PTRA097008NB

4600 Silicon Drive | Durham, NC

27703 | www.wolfspeed.com Rev. 03.1, 2019-03-06

2 PTRA097008NB DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS =

0 V, IDS =

10 mA V(BR)DSS

105 ― ― V Drain Leakage Current VDS =

50 V, VGS =

0 V IDSS ― ―

1 ?A VDS =

105 V, VGS =

0 V IDSS ― ―

10 ?A On-State Resistance (Main) VGS =

10 V, VDS = 0.1 V RDS(on) ― 0.07 ― W (Peak) VGS =

10 V, VDS = 0.1 V RDS(on) ― 0.05 ― W Operating Gate Voltage (Main) VDS =

48 V, IDQ =

600 mA VGS

3 3.65

4 V (Peak) VDS =

48 V, IDQ =

0 mA VGS ― 2.4 ― V Gate Leakage Current VGS =

14 V, VDS =

0 V IGSS ― ―

1 ?A Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS

105 V Gate-Source Voltage VGS C6 to +12 V Operating Voltage VDD

0 to +55 V Junction Temperature TJ

225 °C Storage Temperature Range TSTG C65 to +150 °C 1. Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;

exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. 2. Parameters values can be affected by end application and product usage. Values may change over time. Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance Main (TCASE = 70°C, Pavg =