PDF《PTRA087008NB》

Rev.

03.2, 2019-02-25

4600 Silicon Drive | Durham, NC

27703 | www.wolfspeed.com All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device―observe handling precautions! ergoqhgorgn'

qpjgfq4po5g Thermally-Enhanced High Power RF LDMOS FET

650 W,

48 V,

755 C

805 MHz Features ? Broadband internal input and output matching ? Asymmetric design - Main: P1dB =

245 W Typ - Peak: P1dB =

380 W Typ ? Typical pulsed CW performance,

805 MHz,

48 V, Doherty configuration - Output power at P3dB =

650 W - Efficiency = 52% - Gain = 19.5 dB ? Capable of handling 10:1 VSWR @48 V,

30 W (WCDMA) output power ? Human Body Model Class

2 (per ANSI/ESDA/ JEDEC JS-001) ? Integrated ESD protection ? Low thermal resistance ? RoHS-compliant Description The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from

755 MHz to

805 MHz. Manufactured with Wolfspeed'

s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD =

48 V, IDQ =

510 mA, POUT =

107 W avg, VGS(PEAK) = 2.4 V, ? =

805 MHz, 3GPP, channel bandwidth = 3.84 MHz, peak/ average =

10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 17.5 18.5 ― dB Drain Efficiency hD 48.5

52 ― % Adjacent Channel Power Ratio ACPR ― C31 C28 dBc Output PAR @ 0.01% CCDF OPAR 6.7 C7.2 ― dB PTRA087008NB PTRA087008NB Package PG-HB2SOF-6-1 -60 -40 -20

0 20

40 60

0 4

8 12

16 20

24 25

30 35

40 45

50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD =

48 V, IDQ(MAIN) =

510 mA, VGS(PEAK) = 2.4 V, ? =

805 MHz. 3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF ra087008nb-gr1a PTRA087008NB Rev. 03.2, 2019-02-25

4600 Silicon Drive | Durham, NC

27703 | www.wolfspeed.com

2 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS =

0 V, IDS =

10 mA V(BR)DSS

105 ― ― V Drain Leakage Current VDS =

48 V, VGS =

0 V IDSS ― ―

1 ?A VDS =

105 V, VGS =

0 V IDSS ― ―

10 ?A Gate Leakage Current VGS =

10 V, VDS =

0 V IGSS ― ―

1 ?A On-State Resistance (Main) VGS =

10 V, VDS = 0.1 V RDS(on) ― 0.07 ― W (Peak) VGS =

10 V, VDS = 0.1 V RDS(on) ― 0.05 ― W Operating Gate Voltage (Main) VDS =

48 V, IDQ = 0.2 A VGS 3.0 3.5 4.0 V (Peak) VDS =

48 V, IDQ =

0 A VGS ― 2.4 ― V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS

105 V Gate-Source Voltage VGS C6 to +12 V Operating Voltage VDD

0 to +55 V Junction Temperature TJ

225 °C Storage Temperature Range TSTG C65 to +150 °C 1. Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;

exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. 2. Parameters values can be affected by end application and product usage. Values may change over time. Thermal Chracteristics VDD =