PDF《AO3435》

AO3435 20V P-Channel MOSFET Product Summary VDS = -20V ID = -3.

5A (VGS = -4.5V) RDS(ON) < 70m? (VGS =- 4.5V) RDS(ON) < 90m? (VGS = -2.5V) RDS(ON) < 110m? (VGS = -1.8V) RDS(ON) < 130m? (VGS = -1.5V) General Description The AO3435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.5V. This device is suitable for use in buck convertor applications. SOT23 Top View Bottom View D D D Symbol

10 Sec Steady State VDS VGS -3.5 -2.9 -2.7 -2.3 IDM 1.4

1 0.9 0.6 TJ, TSTG Symbol Typ Max t ≤ 10s

70 90 Steady-State

100 125 Steady-State RθJL

63 80 A Absolute Maximum Ratings TA=25° C unless otherwise noted V V Gate-Source Voltage Pulsed Drain Current B Power Dissipation A TA=25° C Thermal Characteristics -55 to

150 Units -20 ±8 -25 Maximum Junction-to-Ambient A ° C/W ° C TA=70° C Continuous Drain Current A TA=25° C TA=70° C RθJA Parameter PD Drain-Source Voltage ID ° C/W Parameter W Maximum Junction-to-Lead C ° C/W Units Maximum Junction-to-Ambient A Junction and Storage Temperature Range G S G S G S Rev. 2.0 November

2013 www.aosmd.com Page

1 of

5 Symbol Min Typ Max Units BVDSS -20 V -1 TJ=55° C -5 IGSS ±100 nA VGS(th) -0.5 -0.65 -1 V ID(ON) -25 A

56 70 TJ=125° C

80 100

70 90 m?

85 110 m?

100 130 m? gFS

15 S VSD -0.7 -1 V IS -1.4 A Ciss

510 745 pF Coss

70 pF Crss

52 pF Rg

18 23 ? Qg 5.6

11 nC Qgs 0.6 nC Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance DYNAMIC PARAMETERS VGS=0V, VDS=-10V, f=1MHz Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=-4.5V, VDS=-10V, ID=-3.5A Gate Source Charge m? VGS=-2.5V, ID=-3.0A IS=-1A,VGS=0V VDS=-5V, ID=-3.5A VGS=-1.5V, ID=-0.5A VGS=-1.8V, ID=-2.0A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS ?A Gate Threshold Voltage VDS=VGS ID=-250?A VDS=-20V, VGS=0V VDS=0V, VGS=±8V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage On state drain current ID=-250?A, VGS=0V VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.5A Reverse Transfer Capacitance Rev. 2.0 November

2013 www.aosmd.com Page

2 of

5 Qgs 0.6 nC Qgd 1.8 nC tD(on)

11 ns tr

10 ns tD(off)

60 ns tf

30 ns trr

17 49 ns Qrr

4 nC

12 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Turn-On DelayTime Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime VGS=-4.5V, VDS=-10V, RL=3?, RGEN=6? Turn-Off Fall Time VGS=-4.5V, VDS=-10V, ID=-3.5A Gate Source Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/?s IF=-3.5A, dI/dt=100A/?s A: The value of R θJA is measured with the device mounted on

1 in

2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures

1 to

6 are obtained using 300?s pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on

1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev. 2.0 November

2013 www.aosmd.com Page

2 of

5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0 5

10 15

20 25

0 1

2 3

4 5 -I D (A) -VDS (Volts) Figure 1: On-Region Characteristics VGS=-1.5V -2.0V -2.5V -4.5V -3.0V

0 5

10 15

20 0 0.5

1 1.5

2 2.5

3 -I D (A) -VGS(Volts) Figure 2: Transfer Characteristics 25°C 125°C VDS=-5V

50 70

90 110

130 150 R DS(ON) (m ? ? ? ? ) VGS=-1.8V VGS=-2.5V VGS=-4.5V VGS=-1.5V 0.8

1 1.2 1.4 1.6 Normalized On-Resistance VGS=-2.5V ID=-3A VGS=-4.5V ID=-3.5A VGS=-1.8V ID=-2.0A VGS=-1.5V ID=-0.5A Rev. 2.0 November

2013 www.aosmd.com Page

3 of

5 12

50 70

0 2

4 6

8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-4.5V 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -I S (A) -VSD (Volts) Figure 6: Body-Diode Characteristics 25° 125°C 0.8

0 25

50 75

100 125

150 175 Normalized On Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature VGS=-1.5V ID=-0.5A

40 60

80 100

120 140

160 180

0 2

4 6

8 R DS(ON) (m ? ? ? ? ) -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=-3.5A 25° 125°C Rev. 2.0 November

2013 www.aosmd.com Page

3 of

5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0 1

2 3

4 5

0 1

2 3

4 5

6 -V GS (Volts) Qg (nC) Figure 7: Gate-Charge Characteristics

0 200

400 600

800 1000

0 5

10 15

20 Capacitance (pF) -VDS (Volts) Figure 8: Capacitance Characteristics Ciss Coss Crss

1 10

100 1000 Power (W) VDS=-10V ID=-3.5A TJ(Max)=150°C TA=25°C 0.01 0.10 1.00 10.00 100.00 -I D (Amps) 10?s 10ms 1ms 0.1s DC RDS(ON) limited TJ(Max)=150°C TA=25°C 100?s 1s Rev. 2.0 November

2013 www.aosmd.com Page

4 of

5 12 0.1

1 0.00001 0.001 0.1

10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction- to-Ambient (Note E) 0.001 0.01 0.1

1 10 0.00001 0.0001 0.001 0.01 0.1

1 10

100 1000 Z θ θ θ θ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Single Pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W Ton T PD In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.1

1 10

100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) DC TJ(Max)=150°C TA=25°C 1s Rev. 2.0 November

2013 www.aosmd.com Page

4 of

5 VDC Ig Vds DUT VDC Vgs Vgs Qg Qgs Qgd Charge Gate Charge Test Circuit & Waveform - + - + -10V DUT Vgs Diode Recovery Test Circuit & W aveforms Vds + rr Q = - Idt VDC DUT Vdd Vgs Vds Vgs RL Rg Resistive Switching Test Circuit & Waveforms - + Vgs Vds t t t t t t 90% 10% r on d(off) f off d(on) Ig Vgs - + VDC L Isd Vds - dI/dt RM Vdd Vdd trr -Isd -Vds F -I -I Rev. 2.0 November

2013 www.aosmd.com Page

5 of 5