PDF《19-6844; Rev 1; 2/14》

60 V Input Shutdown Current IIN-SH VEN/UVLO = 0V (shutdown mode) 2.8 4.5 ?A Input Quiescent Current IQ_PFM VFB = 1V, MODE = RT= open

118 VFB = 1V, MODE = open

162 IQ_DCM DCM mode, VLX = 0.1V 1.16 1.8 mA IQ_PWM Normal switching mode, fSW = 500kHz, VFB = 0.8V 9.5 ENABLE/UVLO (EN/UVLO) EN/UVLO Threshold VENR VEN/UVLO rising 1.19 1.215 1.24 V VENF VEN/UVLO falling 1.068 1.09 1.111 EN/UVLO Input Leakage Current IEN VEN/UVLO = 0V, TA = +25?C -50

0 +50 nA LDO VCC Output Voltage Range VCC 6V <

VIN <

60V, IVCC = 1mA 4.75

5 5.25 V 1mA ≤ IVCC ≤ 25mA VCC Current Limit IVCC-MAX VCC = 4.3V, VIN = 6V 26.5

54 100 mA VCC Dropout VCC-DO VIN = 4.5V, IVCC = 20mA 4.2 V ??

3 china.maximintegrated.com Electrical Characteristics (continued) (VIN = VEN/UVLO = 24V, RRT = 40.2kI (500kHz), CVCC = 2.2?F, VPGND = VSGND = VMODE = VSYNC = 0V, LX = SS = RESET = open, VBST to VLX = 5V, VFB = 1V, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at TA = +25°C. All voltages are referenced to SGND, unless otherwise noted.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS VCC UVLO VCC_UVR VCC rising 4.05 4.2 4.3 V VCC_UVF VCC falling 3.65 3.8 3.9 POWER MOSFET AND BST DRIVER High-Side nMOS On-Resistance RDS-ONH ILX = 0.3A

165 325 mΩ Low-Side nMOS On-Resistance RDS-ONL ILX = 0.3A

80 150 mΩ LX Leakage Current ILX_LKG VLX = VIN - 1V, VLX = VPGND + 1V, TA = +25?C -2 +2 ?A SOFT-START (SS) Charging Current ISS VSS = 0.5V 4.7

5 5.3 ?A FEEDBACK (FB) FB Regulation Voltage VFB_REG MODE = SGND or MODE = VCC 0.89 0.9 0.91 V MODE = open 0.89 0.915 0.936 FB Input Bias Current IFB

0 <

VFB <

1V, TA = +25?C -50 +50 nA MODE MODE Threshold VM-DCM MODE = VCC (DCM mode) VCC - 1.6 V VM-PFM MODE = open (PFM mode) VCC/2 VM-PWM MODE = GND (PWM mode) 1.4 CURRENT LIMIT Peak Current-Limit Threshold IPEAK-LIMIT 4.4 5.1 5.85 A Runaway Current-Limit Threshold IRUNAWAY-LIMIT 4.9 5.7 6.7 A Valley Current-Limit Threshold ISINK-LIMIT MODE = open or MODE = VCC -0.16

0 +0.16 A MODE = GND -1.8 PFM Current-Limit Threshold IPFM MODE = open 0.6 0.75 0.9 A RT AND SYNC Switching Frequency fSW RRT = 102kΩ

180 200

220 kHz RRT = 40.2kΩ

475 500

525 RRT = 8.06kΩ

1950 2200

2450 RRT = OPEN

460 500

540 SYNC Frequency Capture Range fSW set bt RRT 1.1 x fSW 1.4 x fSW kHz SYNC Pulse Width

50 ns SYNC Threshold VIH 2.1 V VIL 0.8 ??

4 china.maximintegrated.com Electrical Characteristics (continued) (VIN = VEN/UVLO = 24V, RRT = 40.2kI (500kHz), CVCC = 2.2?F, VPGND = VSGND = VMODE = VSYNC = 0V, LX = SS = RESET = open, VBST to VLX = 5V, VFB = 1V, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at TA = +25°C. All voltages are referenced to SGND, unless otherwise noted.) (Note 2) Note 2: All limits are 100% tested at +25°C. Limits over temperature are guaranteed by design. Note 3: See the Overcurrent Protection/HICCUP Mode section for more details. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS VFB Undervoltage Trip Level to Cause Hiccup VFB-HICF 0.56 0.58 0.6 V HICCUP Timeout (Note 3)

32768 Cycles Minimum On-Time tON-MIN

135 ns Minimum Off-Time tOFF-MIN

140 160 ns LX Dead Time

5 ns RESET RESET Output Level Low IRESET = 1mA 0.4 V RESET Output Leakage Current TA = TJ = +25?C, VRESET = 5.5V -0.1 +0.1 ?A VOUT Threshold for RESET Assertion VFB-OKF VFB falling 90.5

92 94 % VOUT Threshold for RESET Deassertion VFB-OKR VFB rising 93.8

95 97.2 % RESET Deassertion Delay After FB Reaches 95% Regulation

1024 Cycles THERMAL SHUTDOWN Thermal Shutdown Threshold Temperature rising