PDF《JT020N120WCD/ABCD/20N120C》

版本:201510C 1/10 N 沟绝缘栅双极晶体管 N-CHANNEL IGBT IGBT JT020N120WCD/ABCD/20N120C 订货型号Order codes 印记Marking 封装Package 无卤素Halogen Free 包装Packaging 器件重量 Device Weight JT020N120WCD-W-O-N-B JT020N120WCD TO-247 有卤 No 条管 Tube 6.

0g(typ) JT020N120ABCD-AB-O-N-B JT020N120ABCD TO-3PB 有卤 No 条管 Tube 5.1g(typ) 20N120C- W-O-N-B 20N120 TO-247 有卤 No 条管 Tube 6.0 g(typ) 封装 Package 主要参数 MAIN CHARACTERISTICS IC

20 A VCES

1200 V Vcesat_typ (@Vge=15V) 1.8V 用途 ? 逆变器 ? 电磁炉 ? UPS 电源 APPLICATIONS ? General purpose inverters ? Induction heating(IH) ? UPS 产品特性 ?低栅极电荷 ?FS 技术 ?通态压降, VCE(sat), typ = 1.8V @ IC = 20A and TC = 25° C ?RoHS 产品 FEATURES ?Low gate charge ?FS Technology ? saturation voltage: VCE(sat), typ = 1.8V @ IC = 20A and TC = 25° C ?RoHS product 订货信息 ORDER MESSAGE G TO-247 TO-3PB JT020N120WCD/ABCD/20N120C 版本:2015010C 2/10 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) *漏极电流由最高结温限制 *Collector current limited by maximum junction temperature 项目Parameter 符号Symbol 数值Value 单位Unit JT020N120WCD/ABCD/20N120C 最高集电极-发射极直流电压 Collector-Emmiter Voltage Vces

1200 V 连续集电极极电流 Collector Current-continuous IC T=25℃ T=100℃

40 A

20 A 最大脉冲集电极极电流(注1) Collector Current C pulse (note 1) ICM

60 A 最高栅极发射极电压 Gate-Emmiter Voltage VGES ±

20 V 安全工作区 Turn-off safe area -

60 A 耗散功率 Power Dissipation PD TC=25℃

350 W 最高结温及存储温度 Operating and Storage Temperature Range TJ,TB STGB -55~+150 ℃ 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes TL

300 ℃ JT020N120WCD/ABCD/20N120C 版本:2015010C 3/10 电特性 ELECTRICAL CHARACTERISTICS 项目Parameter 符号Symbol 测试条件 Tests conditions 最小 Min 典型 Typ 最大 Max 单位Units 关态特性 Off CCharacteristics 集电极-发射极击穿电压 Collector-Emmiter Voltage BVCES IC=500μA, VGE=0V

1200 - - V 击穿电压温度特性 Breakdown Voltage Temperature Coefficient ΔBVCES/ΔTJ IC=1mA, referenced to 25℃ - 0.6 - V/℃ 零栅压下集电极漏电流 Zero Gate Voltage Collector Current ICES VCE=1200V,VGE=0V, TC=25℃ - - 0.2 mA TC=100℃

2 mA TC=150℃ - - 2.5 mA 正向栅极体漏电流 Gate-body leakage current, forward IGESF VCE=0V, VGE =20V - -

100 nA 反向栅极体漏电流 Gate-body leakage current, reverse IGESR VCE=0V, VGE =-20V - - -100 nA 通态特性 On-Characteristics 阈值电压 Gate-Emmiter Threshold Voltage VGE(th) VCE = VGE , IC=600μA 4.5 - 6.5 V 饱和压降 Collector-Emmiter saturation Voltage VCESAT VGE=15V IC=20A Tc=25℃ Tc=125℃ Tc=150℃ - - - 1.8 2.0 2.1 2.45 - - V 短路电流(注2) Short Collector current(Note 2) IC(SC) VGE=15V VCE=600V tsc 10μs Tc=25℃

160 A 动态特性 Dynamic Characteristics 输入电容 Input capacitance Cies VCE=25V, VGE=0V, f=1.0MHB ZB -

1600 2400 pF 输出电容 Output capacitance Coes -

120 190 pF 反向传输电容 Reverse transfer capacitance Cres -

84 130 pF JT020N120WCD/ABCD/20N120C 版本:2015010C 4/10 电特性 ELECTRICAL CHARACTERISTICS 开关特性 Switching Characteristics 开启延迟时间 Turn-On delay time td(on) VCE=600V,IC=20A,RG=10? TC=25℃ Inductive Load -

90 - ns 上升时间 Turn-On rise time tr -

75 - ns 关断延迟时间 Turn-Off delay time td(off) -

210 - ns 下降时间 Turn-Off Fall time tf -

100 - ns 开启损耗 Turn-on energy Eon - 2.8 - mJ 关断损耗 Turn-off energy Eoff - 1.1 - mJ 总的开关损耗 Total switching energy Etotal - 3.9 - mJ 栅极电荷总量 Total Gate Charge Qg VCE =600V , IC=20A VGE=15V (note 3,4) -