PDF《CS90N03 A3》

CS90N03 A3 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO.

, LTD. Page

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10 2019V01 R Silicon N-Channel Power MOSFET General Description: CS90N03 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤5.5 m?) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tj= 25℃ unless otherwise specified) Symbol Parameter Rating Units VDSS Drain-to-Source Voltage

30 V ID Continuous Drain Current TC =25 °C

90 A Continuous Drain Current TC =

100 °C

60 A IDM a1 Pulsed Drain Current TC =

25 °C

360 A VGS Gate-to-Source Voltage ±20 V EAS a2 Avalanche Energy

240 mJ PD Power Dissipation TC =

25 °C

53 W Derating Factor above 25°C 0.424 W/℃ TJ,Tstg Operating Junction and Storage Temperature Range 150,C55 to

150 ℃ TL MaximumTemperature for Soldering

300 ℃ VDSS

30 V ID(Silicon limited current)

90 A ID(Package limited)

60 A PD

53 W RDS(ON)Typ 3.6 m? WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page

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10 2019V01 R CS90N03 A3 Electrical Characteristics(Tj= 25℃ unless otherwise specified) : OFF Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250?A

30 -- -- V IDSS Drain to Source Leakage Current VDS =30V, VGS= 0V, Tj = 25℃ -- --

1 ?A VDS =24V, VGS= 0V, Tj = 125℃ -- --

100 IGSS(F) Gate to Source Forward Leakage VGS=20V -- --

100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -100 nA ON Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=19A -- 3.6 5.5 m? VGS=4.5V,ID=19A -- 5.0 7.5 m? VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250?A 1.0 1.5 2.0 V Pulse width tp≤300?s,δ≤2% Dynamic Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. Rg Gate resistance VGS=0V, VDS=0V, f=1MHz -- 2.2 -- ? Ciss Input Capacitance VGS = 0V VDS =15V f = 1.0MHz --

2848 -- pF Coss Output Capacitance --

356 -- Crss Reverse Transfer Capacitance --

316 -- Resistive Switching Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. td(ON) Turn-on Delay Time VGS=10V,RG=3Ω VDD=15V,ID=45A --

13 -- ns tr Rise Time --

8 -- td(OFF) Turn-Off Delay Time -- 56.5 -- tf Fall Time --

12 -- Qg Total Gate Charge ID =45A VDD =15V VGS = 10V -- 53.5 -- nC Qgs Gate to Source Charge -- 8.2 -- Qgd Gate to Drain ("Miller")Charge --

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10 2019V01 R CS90N03 A3 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Units Min. Typ. Max. IS Continuous Source Current (Body Diode) TC =

25 °C -- --

90 A ISM Maximum Pulsed Current (Body Diode) -- --

360 A VSD Diode Forward Voltage IS=45A,VGS=0V -- -- 1.2 V trr Reverse Recovery Time di/dt=100A/us IF=45A --

12 -- ns Qrr Reverse Recovery Charge -- 4.2 -- nC Pulse width tp≤300?s,δ≤2% Symbol Parameter Max. Units RθJC Junction-to-Case 2.36 ℃/W RθJA Junction-to-Ambient

100 ℃/W a1 :Repetitive rating;

pulse width limited by maximum junction temperature a2 :L=0.5mH,Ias=31A Start TJ=25℃ WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page